1
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, July 1, 1997: US05643826 (1049 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


2
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, July 13, 1999: US05923962 (773 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


3
Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga: Semiconductor device having an SOI structure and manufacturing method therefor. Semiconductor Energy Laboratory, Fish & Richardson P C, October 3, 2000: US06127702 (414 worldwide citation)

A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 are effective in ...


4
Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura: Method for manufacturing semiconductor device. Semiconductor Energy Laboratory, Sixbey Friedman Leedom & Ferguson, April 4, 1995: US05403772 (391 worldwide citation)

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum ...


5
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Active Matry Display. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, September 4, 2001: US06285042 (289 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


6
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Semiconductor thin film transistor with crystal orientation. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, January 1, 2002: US06335541 (247 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


7
Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura: Thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, October 8, 1996: US05563426 (215 worldwide citation)

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum ...


8
Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga: Semiconductor device and method of manufacturing the same. Semiconductor Energy Laboratory, Fish & Richardson P C, April 2, 2002: US06365933 (196 worldwide citation)

A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere conta ...


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Shunpei Yamazaki, Akiharu Miyanaga, Jun Koyama, Takeshi Fukunaga: Thin film semiconductor and method for manufacturing the same, semiconductor device and method for manufacturing the same. Semiconductor Energy Laboratory, Fish & Richardson P C, April 13, 1999: US05893730 (158 worldwide citation)

The present invention is related to a thin film semiconductor which can be regarded as substantially a single crystal and a semiconductor device comprising an active layer formed by the thin film semiconductor. At least a concave or convex pattern is formed intentionally on a insulating film provide ...



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