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Yasushi Takada, Yuri Kubota, Takashi Mimura: Laminated film for thermosensitive image transfer material. Toray, Schnader Harrison Segal & Lewis, May 29, 2003: US20030099852-A1

A laminated film for thermosensitive image transfer material, comprises a biaxially oriented polyester film including at least one surface thereof a laminated layer containing 50% by weight or more of a wax-based compound, wherein the laminated layer has island-like protrusions, wherein the island-l ...


52
Takashi Mimura, Yoshio Tanaka, Hisashi Oowatari: White film for surface light source reflecting members. Schnader Harrison Segal & Lewis, April 10, 2003: US20030068466-A1

A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures ...


53
Keiji Ikeda, Takashi Mimura: Semiconductor device and manufacturing method of the same. Fujitsu, Armstrong Westerman & Hattori, April 10, 2003: US20030067021-A1

In a semiconductor heterojunction corresponding to the n-channel and p-channel, the present invention is to enable the selective carrier injection into each channel by employing a height difference of a Schottky barrier, B, which is provided between a source/drain consisting of metal or semiconducto ...


54
Takashi Mimura, Keiji Ikeda: Semiconductor device and method for fabricating the same. Fujitsu, Armstrong Westerman & Hattori, September 11, 2003: US20030168700-A1

The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and ...


55
Takashi MIMURA, Atsushi YAMADA: Semiconductor device with strain in channel region and its manufacture method. Fujitsu, Westerman Hattori Daniels & Adrian, December 11, 2008: US20080303062-A1

A first film made of SiGe is formed over a support substrate whose surface layer is made of Si. A gate electrode is formed over a partial area of the first film, and source and drain regions are formed in the surface layer of the support substrate on both sides of the gate electrode. The gate electr ...


56
Ayako Kamimura, Tomoya Takahashi, Takashi Mimura, Shinkichi Honda: Hair-growing agent. Kyowa Hakko Kogyo, Fitzpatrick Cella Harper & Scinto, November 21, 2002: US20020172657-A1

The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I): 1 (wherein R1 represents alkyl, alkenyl, alkanoyl or alkenoyl; and when R1 represents alkyl or alkenyl, R2 represents alkyl, alkenyl, alkanoyl or alkenoyl, and whe ...


57
Ayako Kamimura, Tomoya Takahashi, Takashi Mimura, Shinkichi Honda: Hair-growing agent. Kyowa Hakko Kogyo, Fitzpatrick Cella Harper & Scinto, October 24, 2002: US20020155085-A1

The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I): 1 (wherein R1 represents straight-chain alkyl having an odd number of carbon atoms, straight-chain alkenyl having an odd number of carbon atoms, or straight-chain ...


58
Takashi Mimura, Keiji Ikeda: Semiconductor device and method for fabricating the same. Fujitsu, Westerman Hattori Daniels & Adrian, October 18, 2007: US20070243672-A1

The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and ...


59
Takashi Mimura, Keiji Ikeda: Semiconductor device and method for fabricating the same. Fujitsu, Westerman Hattori Daniels & Adrian, April 21, 2005: US20050085027-A1

The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and ...


60
Takashi Mimura: Field effect transistor and production method thereof. Fujitsu, Armstrong Kratz Quintos Hanson & Brooks, April 20, 2006: US20060081947-A1

A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source region, a drain region and a gate electrode are formed from silicide or other metallic materials. The met ...