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Takashi Mimura, Keiji Ikeda: Semiconductor device and method for fabricating the same. Fujitsu, Westerman Hattori Daniels & Adrian, January 8, 2008: US07316959 (1 worldwide citation)

The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and ...


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Kazumori Sonoda, Syunichi Osada, Takashi Mimura: Multilayer film and molded body. Toray, RatnerPrestia, March 17, 2015: US08980432 (1 worldwide citation)

A first multilayer film is a multilayer film which contains a layer A on at least one surface of a base film, in which the layer A has (1) a polycaprolactone segment, (2) a polysiloxane segment and/or a polydimethyl siloxane segment, and (3) a urethane bond, and the layer A has a glass transition te ...


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Takashi Mimura, Akimitsu Tsukuda, Yasushi Takada, Hiroyuki Tanaka: Laminated film and process. Toray, Schnader Harrison Segal & Lewis, April 9, 2002: US06368722 (1 worldwide citation)

A laminated film containing a heat resisting resin layer which is soluble in a dipolar aprotic solvent, is laminated on a biaxially oriented thermoplastic film, wherein the biaxially oriented thermoplastic film and the heat resisting resin layer are directly adhered to each other, and the heat resis ...


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Yasuyuki Ishida, Yu Abe, Michiko Kai, Takashi Mimura: Antireflection member and manufacture method for the same. Toray, DLA Piper, August 23, 2016: US09423531

An antireflection member comprising an antireflection layer includes two adjacent layers with different refractive indices, the antireflection layer formed at least on a first surface of a support substrate, and one of the two adjacent layers with different refractive indices located farther from th ...


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Yasuyuki Ishida, Tadahiko Iwaya, Takashi Mimura, Yasushi Takada: Forming material, paint material composition and production method for forming material. Toray, DLA Piper, June 21, 2016: US09371467

A forming material having a layer on at least one of surfaces of a support substrate material, wherein the layer contains a fluorine-containing compound, and has a 60-degree specular gloss level prescribed in JIS Z8741 (1997 edition) greater than or equal to 60%, and the layer has a surface property ...


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Kazumori Sonoda, Syunichi Osada, Takashi Mimura, Yoshihiro Masuda, Norifumi Miwa, Takayoshi Kirimoto, Ippei Ozeki: Laminated film. Toray, DLA Piper, October 18, 2016: US09469789

A laminated film has a layer (A) on at least one side of a base film, wherein resin contained in the layer (A) has (1) a (poly)caprolactone segment and (2) a urethane bond and, in measurement using a micro hardness tester, a maximum displacement amount in a thickness direction of the layer (A) is 1. ...


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Shotaro Tanaka, Tatsuro Tsuchimoto, Takashi Mimura, Junpei Ohashi: Flame retardant polyester film and processed product including the same. Toray, DLA Piper, December 2, 2008: US07459217

The present invention is a flame-retardant polyester film including resin layers laminated on both surfaces of a polyester film, wherein the resin layer satisfies 15≦(Wc1−Wc2)/Wc0×100≦99 (where Wc0 represents the weight of the resin layer, Wc1 represents the weight of the resin layer after the tempe ...


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Takashi Mimura, Yoshio Tanaka, Hisashi Oowatari: White film for surface light source reflecting members. Toray, DLA Piper, July 16, 2013: US08486519

A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures ...


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Takashi Mimura: High electron mobility single heterojunction semiconductor devices. Fujitsu, Staas & Halsey, May 7, 1991: USRE033584

A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. ...