21
Kouichiro Odani, Takashi Mimura: Heterojunction field effect device having an implanted region within a device channel. Fujitsu, Staas & Halsey, September 13, 1988: US04771324 (6 worldwide citation)

A depletion type element under the category of heterojunction field effect element having an n-region arranged in contact with a two-dimensional electron gas. More specifically a very limited region of the upper surface of the heterojunction faces the bottom surface of a gate electrode, thereby real ...


22
Toshihiko Hiraoka, Kenji Tsunashima, Masaru Suzuki, Takashi Mimura, Hirokazu Kurome: Polyester film and photosensitive material. Toray, Austin R Miller, December 14, 1993: US05270160 (6 worldwide citation)

A polyester film comprising a polyester whose dicarboxylic acid copolymerized component contains (i) an aromatic dicarboxylic acid having a metal sulfonate and/or a derivative thereof and (ii) a polyetherdicarboxylic acid represented by the following chemical formula (a) and having a mean molecular ...


23
Takashi Mimura, Keiji Ikeda: Semiconductor device with high mobility and high speed. Fujitsu, Westerman Hattori Daniels & Adrian, February 15, 2005: US06855987 (5 worldwide citation)

The semiconductor device comprises a semiconductor layer 18 formed on an insulation layer 16, a gate electrode 22 formed on the semiconductor layer with a gate insulation film 20 formed therebetween, a source/drain region 24 formed on the semiconductor layer on both sides of the gate electrode, and ...


24
Satoshi Kojima, Takashi Mimura, Yu Abe: Hard-coated film, method for production thereof and antireflection film. Toray, Birch Stewart Kolasch & Birch, November 13, 2012: US08309202 (3 worldwide citation)

There is provided a hard-coated film that includes a thermoplastic film and a hard coat layer placed thereon, has high surface hardness, is prevented from forming interference iris patterns, does not reduce image sharpness when used for antireflection films, and is prevented from causing screen glit ...


25
Kenji Tsunashima, Takashi Mimura, Takashi Sumiya, Hiroshi Kuboyama: Polyester-based film. Toray, Birch Stewart Kolasch & Birch, September 24, 1991: US05051475 (3 worldwide citation)

The present invention is directed to a polyester film comprising at least at its surface portion oriented sulfonic acid groups and/or salts thereof with an orientation degree of 5-100, which has an excellent adhesiveness, especially excellent anti-alkaline adhesiveness. The present invention also ma ...


26
Takashi Mimura, Yoshio Tanaka, Hisashi Oowatari: White film for surface light source reflecting members. Toray, DLA Piper US, October 23, 2007: US07285327 (3 worldwide citation)

A white film for a reflecting structure for surface light sources, which contains voids inside it and has a light stabilizer-containing coating film formed on at least one surface of it, is aged little with time and its brightness lowers little even when used for a long time. The white film ensures ...


27
Takashi Mimura: Logic circuit with enhancement type FET and Schottky gate. Fujitsu, Staas & Halsey, August 9, 1994: US05336949 (3 worldwide citation)

A logic circuit comprising an inverter which includes a load element connected at its one end to a high-potential power supply, an enhancement type N-channel field-effect transistor having a Schottky gate, the transistor being connected at its drain to another end of the load element and at its sour ...


28
Ayako Kamimura, Tomoya Takahashi, Takashi Mimura, Shinkichi Honda: Hair-growing agent. Kyowa Hakko Kogyo, Fitzpatrick Cella Harper & Scinto, May 13, 2003: US06562804 (2 worldwide citation)

The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I):


29
Ayako Kamimura, Tomoya Takahashi, Takashi Mimura, Shinkichi Honda: Hair-growing agent. Kyowa Hakko Kogyo, Fitzpatrick Cella Harper & Scinto, May 13, 2003: US06562803 (2 worldwide citation)

The present invention provides a hair-growing agent comprising, as an active ingredient, a phosphatidic acid represented by formula (I):


30
Keiji Ikeda, Takashi Mimura: Semiconductor device and manufacturing method of the same. Fujitsu, Westerman Hattori Daniels & Adrian, October 12, 2004: US06803613 (2 worldwide citation)

In a semiconductor heterojunction corresponding to the n-channel and p-channel, the present invention is to enable the selective carrier injection into each channel by employing a height difference of a Schottky barrier, &phgr; B, which is provided between a source/drain consisting of metal or semic ...