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Christian Dussarrat, Jean Marc Girard, Takako Kimura, Naoki Tamaoki, Yuusuke Sato: Methods for producing silicon nitride films and silicon oxynitride films by thermal chemical vapor deposition. L Air Liquide Société Anonyme á Directoire et Conseil de Surveillance pour l Etude et l Exploitation des Procédés Georges Claude, Linda K Russell, Christopher J Cronin, March 20, 2007: US07192626 (52 worldwide citation)

Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least about 10 and/or the thermal CVD reaction is run at a temperature no greater than abo ...


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Yukinobu Nishikawa, Yoshinori Hashizume, Takako Kimura: Mixed gas supply system with a backup supply system. Teisan Kabushiki Kaisha, L Air Liquide Societe Anonyme Pour L Etude et L Exploitation Des Procedes Georges Claude, Oblon Spivak McClelland Maier & Neustadt, November 28, 1995: US05470390 (22 worldwide citation)

A first MFC 10 and a second MFC 10A are disposed respectively on a silane gas feed line 5 and an inert gas or other dilution gas feed line 19 for feeding a gas for semiconductors such as silane gas or an inert gas or other dilution gas to a mixing chamber 13. A buffer tank 21 is provided which restr ...


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Jacques Mettes, Takako Kimura, Michael Schack: Process for producing low-concentration gas mixtures, and apparatus for producing the same. L Air Liquide Societe Anonyme pour l Etude et l Exploitation des Procedes Georges Claude, Oblon Spivak McClelland Maier & Neustadt P C, October 8, 1991: US05054309 (21 worldwide citation)

This invention relates to a process for producing gas mixtures by a plurality of dilution steps of a high concentration standard gas with a high purity diluent gas. According to the invention, as soon as the high purity diluent gas is generated, no further contaminants such as gaseous impurities are ...


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Jacques Mettes, Takako Kimura, Michael Schack: Process for producing standard gas mixture and apparatus for producing the same. L Air Liquide Societe Anonyme pour l Etude et l Exploitation des Procedes Georges Claude, Oblon Spivak McClelland Maier & Neustadt, October 27, 1992: US05157957 (20 worldwide citation)

The present invention provides a process for producing standard gas mixtures which entails purifying a raw gas using a gas purifier (3) such as a known two stage gas purifier system, thereby generating a high-purity diluent gas;


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Jean Marc Girard, Takako Kimura: Process gas supply mechanism for ALCVD systems. L&apos Air Liquide Societe Anonyme a Directoire et Conseil de Surveillance pour l&apos Etude et l&apos Exploitation des Procedes Georges Claude, Burns Doane Swecker & Mathis L, November 2, 2004: US06810897 (3 worldwide citation)

To provide a process gas supply mechanism for ALCVD systems that enables the high speed switching of process gases without accompanying particulate contamination of the treatment substrate. The ALCVD system is provided with a CVD treatment section and a process gas supply section. The process gas su ...


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Christian Dussarrat, Jean Marc Girard, Takako Kimura: Method for producing silicon nitride films. L Air Liquide Societe Anonyme pour l Etude et l Exploitation des Procedes Georges Claude, Patricia E McQueeney, January 22, 2013: US08357430 (2 worldwide citation)

(Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) M ...


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Takeshi Hoshi, Tsuyoshi Saito, Takako Kimura, Christian Dussarrat, Kazutaka Yanagita: Method for producing silicon nitride films and process for fabricating semiconductor devices using said method. L Air Liquide Societe Anonyme A Directoire et Conseil de Surveillance pour l Etude et l Exploitation des Procedes Georges Claude, Brandon Clark, April 1, 2008: US07351670 (2 worldwide citation)

Silicon nitride film is formed on a silicon wafer mounted in a boat in an LPCVD tool by feeding a silicon source (SiH2Cl2, SiCl4, Si2Cl6, etc.) from an injector and feeding a mixed gas of monomethylamine (CH3NH2) and ammonia (NH3) as the nitrogen source from an injector. This addition of monomethyla ...


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Yoshiharu Hiruma, Takako Kimura, Hironari Shimizu: CDR-modified anti-Siglec-15 antibody. Daiichi Sankyo Company, Foley & Lardner, October 11, 2016: US09464133

Provided is a pharmaceutical composition for the treatment and/or prophylaxis of abnormal bone metabolism targeting a protein encoded by a gene strongly expressed in osteoclasts. Specifically provided is a pharmaceutical composition containing an antibody which specifically recognizes human Siglec-1 ...


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Naoki Tamaoki, Yuusuke Sato, Jun Sonobe, Takamitsu Shigemoto, Takako Kimura: Method of cleaning a film-forming apparatus. Kabushiki Kaisha Toshiba, L Air Liquide, Oblon Spivak McClelland Maier & Neustadt L, May 17, 2011: US07942974

A method of cleaning a film-forming apparatus to remove a silicon-based material deposited on a constituent member of the film-forming apparatus after being used to form thin films includes introducing a first gas including fluorine gas and a second gas including carbon monoxide gas into the film-fo ...