1
Hideaki Kurokawa, Katsuya Ebara, Sankichi Takahashi, Harumi Matsuzaki, Hiroaki Yoda, Takahisa Nitta, Isao kouchi, Yukio Hishinuma: Vapor washing process and apparatus. Hitachi, Fay Sharpe Beall Fagan Minnich & McKee, April 21, 1992: US05105556 (92 worldwide citation)

Vapor is separated from mist accompanying the vapor by passing the vapor through a porous membrane. The vapor having passed through the membrane is brought into contact with an object to be washed and condenses thereon, whereby the object is washed.


2
Tadahiro Ohmi, Nobuyoshi Tanaka, Takeo Ushiki, Toshikuni Shinohara, Takahisa Nitta: SOI bonding structure. Canon Kabushiki Kaisha, Tadahiro Ohmi, Ultraclean Technology Research Institute, Fitzpatrick Cella Harper & Scinto, July 3, 2001: US06255731 (79 worldwide citation)

A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material l ...


3
Tadahiro Ohmi, Takahisa Nitta, Masaki Hirayama, Haruyuki Takano, Ryu Kaiwara: Plasma device. Tadahiro Ohmi, Randall J Knuth, March 19, 2002: US06357385 (44 worldwide citation)

A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrod ...


4
Nobuo Owada, Hiroyuki Akimori, Takahisa Nitta, Tohru Kobayashi, Shunji Sasabe, Mikinori Kawaji, Osamu Kasahara: Semiconductor integrated circuit device and method of manufacturing the same. Hitachi, Antonelli Terry Stout & Kraus, October 22, 1991: US05060045 (41 worldwide citation)

Disclosed is a semiconductor integrated circuit device adopting a gate array scheme, having a plurality of layers of wiring formed by a Design Automation system. The device according to the present invention includes a semiconductor substrate having basic cell forming regions, the basic cell forming ...


5
Tadahiro Ohmi, Senri Ojima, Takahisa Nitta: Cleaning method for peeling and removing photoresist. Tadahiro OHMI, Randall J Knuth, January 12, 1999: US05858106 (41 worldwide citation)

A cleaning method for peeling and removing photoresists from a semiconductor by applying ultrasound to a cleaning solution comprising a mixture of an organic solvent diluted with pure water and halogenated alkali metal salts, hydrofluoric acid, or ammonium fluoride. The cleaning method removes organ ...


6
Katumi Ogiue, Hiroyuki Kondo, Takashi Ishikawa, Takaaki Mori, Takahisa Nitta: Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique. Hitachi, Craig & Antonelli, September 5, 1978: US04111724 (26 worldwide citation)

In the production of a semiconductor integrated circuit device including a selective oxidation step at a high temperature using a nitride film as a mask for isolating respective element regions in a semiconductor wafer with oxidized regions, electrode contact regions and active regions are successiv ...


7
Nobuhiro Miki, Takahisa Nitta, Yasuyuki Harada, Tadahiro Ohmi: Washing apparatus and washing method. Kabushiki Kaisha Ultraclean Technology Research Institute, Randall J Knuth, December 4, 2001: US06325081 (20 worldwide citation)

A washing apparatus and a washing method, which further improve a washing effect and enable highly clean washing with a small amount of chemical. Also, it is an object of the invention to provide a washing apparatus of high throughput involving rapid switching of various chemicals of high responsibi ...


8
Tadahiro Ohmi, Takahisa Nitta, Kazuhiko Kawada, Mitsunori Nakamori, Toshihiro II: Cleaning method. Tadahiro Ohmi, Kabushiki Kaisha Ultraclean Technology Research Institute, Randall J Knuth, February 19, 2002: US06348157 (19 worldwide citation)

A cleaning method capable of processing at room temperatures without conducting heating, uses little chemicals and water, and does not require special devices or materials. The chemical cleaning processes and rinse processes employ pure water or ultrapure water in a semiconductor wet cleaning proces ...


9
Nobuhiro Miki, Takahisa Nitta: Ultraviolet processing apparatus and ultraviolet processing method. Sipec Corporation, Connolly Bove Lodge & Hutz, January 7, 2003: US06503464 (18 worldwide citation)

An ultraviolet light reaction system is constructed for surface cleaning/surface processing, a processing speed and an apparatus size that can not be attained by any conventional chemical reaction system, are realized, and realization of a time-sharing performance/a high-throughput performance/a com ...


10
Takahisa Nitta, Nobuhiro Miki, Yoshiaki Yamaguchi: Chemical supply system. Sipec Corporation, Connolly Bove Lodge & Hutz, July 20, 2004: US06764212 (18 worldwide citation)

A chemical supply system comprises, as principal elements, a chemical storage tank in which a liquid chemical for cleaning is stored in the state of its formulated concentrate, a chemical supply apparatus connected to the chemical storage tank for positively performing chemical supply, a piping syst ...



Click the thumbnails below to visualize the patent trend.