1
Sachiko Kobayashi, Taiga Uno, Kazuko Yamamoto, Koji Hashimoto: Mask data design method. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, June 5, 2001: US06243855 (89 worldwide citation)

A correction target segment extracted from the design pattern is divided into lengths suited for correction. If the arrangement of the divided segments is a one-dimensional pattern, a correction value is obtained by conducting a one-dimensional process simulation to an arrangement within a predeterm ...


2
Taiga Uno, Kiyomi Koyama, Kazuko Yamamoto, Satoshi Tanaka, Sachiko Kobayashi, Koji Hashimoto: Method for designing Levenson photomask. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, December 21, 1999: US06004701 (23 worldwide citation)

In a Levenson photomask design method of partially forming a plurality of opening patterns for passing incident light in a light-shielding film for shielding the incident light, and arranging, on some patterns, phase shifters, line segment pairs of different patterns which are adjacent to each other ...


3
Taiga Uno, Yukiyasu Arisawa, Hajime Aoyama: Method of correcting a flare and computer program product. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, October 18, 2011: US08039177 (6 worldwide citation)

A method of correcting a flare comprising: calculating a distribution of a flare value corresponding to pattern data on the pattern data as a flare map; calculating an occupancy of a pattern having a predetermined flare value on the pattern data as a flare value occupancy for each flare value, by us ...


4
Taiga Uno, Kiyomi Koyama, Kazuko Yamamoto: Method and a system for designing a photomask for use in manufacture of a semiconductor device. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, August 18, 1998: US05795683 (4 worldwide citation)

A method for designing a photomask, used in photolithography using partially coherent incident light, the photomask having a substrate on which a plurality of transparent regions and opaque regions are formed, the transparent regions including a phase shifter for providing the incident light transmi ...


5
Taiga Uno, Kazuko Yamamoto, Sachiko Kobayashi, Satoshi Tanaka: Pattern correcting method and pattern verifying method. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt P C, September 16, 2003: US06622297 (3 worldwide citation)

A pattern of exposure mask-use design data having a hierarchical structure is corrected in order to finish with fidelity a transfer pattern to be formed on a wafer, in which if the exposure apparatus has a light source shape that does not have rotation symmetry at any given angle around an optical a ...


6
Yukiyasu Arisawa, Taiga Uno: Flare value calculation method, flare correction method, and computer program product. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, May 14, 2013: US08443311 (1 worldwide citation)

In a flare value calculation method according to an embodiment, an average optical intensity is calculated for each of mask patterns in a case where an exposure process is performed on a substrate using the mask patterns. Then, pattern correction amounts for the mask patterns corresponding to the av ...


7
Motohiro Okada, Shuhei Sota, Takaki Hashimoto, Yasunobu Kai, Kazuyuki Masukawa, Yuko Kono, Chikaaki Kodama, Taiga Uno, Hiromitsu Mashita: Integrated circuit device, method for producing mask layout, and program for producing mask layout. Kabushiki Kaisha Toshiba, Oblon McClelland Maier & Neustadt L, February 9, 2016: US09257367

According to one embodiment, a method for producing a mask layout of an exposure mask for forming wiring of an integrated circuit device, includes estimating shape of the wiring formed based on an edge of a pattern included in an initial layout of the exposure mask. The method includes modifying sha ...


8
Hiromitsu Mashita, Katsumi Iyanagi, Takafumi Taguchi, Toshiya Kotani, Hidefumi Mukai, Taiga Uno, Takashi Nakazawa: Creating mask data of integrated circuit patterns using calculated etching conversion difference. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, June 5, 2012: US08196071

A pattern data creating method comprising: referring to a first correspondence relation between an amount of dimension variation between a first pattern formed on a substrate and a second pattern formed by processing the substrate using the first pattern and either one of a pattern total surface are ...


9
Ryota Aburada, Hiromitsu Mashita, Taiga Uno, Masahiro Miyairi, Toshiya Kotani: Pattern generating method, pattern forming method, and pattern generating program. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, February 23, 2016: US09268208

One embodiment includes: a step of evaluating an amount of flare occurring through a mask at EUV exposure; a step of providing a dummy mask pattern on the mask based on the evaluated result of the amount of flare; and a step of executing a flare correction and an optical proximity correction on a la ...


10
Taiga Uno, Toshiya Kotani, Satoshi Tanaka: Flare map calculating method and recording medium. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, September 3, 2013: US08527914

A flare map calculating method of an embodiment calculates an optical image intensity distribution in each division region set in a pattern region. Furthermore, an average value of the optical image intensity distribution is calculated in each division region. A pattern or plural patterns, which has ...