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Tadahiro Ohmi, Kazuhiko Sugiyama, Fumio Nakahara, Satoshi Mizokami: Apparatus and method for oxidation treatment of metal. Tadahiro Ohmi, Baker & Daniels, July 13, 1993: US05226968 (23 worldwide citation)

A metal oxidation treatment apparatus to form the passivation film on the surface of the metal to be oxidized such as stainless steel or the like, comprising an oxidation furnace, a gas inlet to introduce gas into said oxidation furnace, a discharge outlet to discharge the gas from said oxidation fu ...


62
Tadahiro Ohmi, Yasuhiko Kasama, Hirobumi Fukui: Reactive ion etching device. Tadahiro Ohmi, Alps Electric, Baker & Daniels, May 16, 1995: US05415718 (23 worldwide citation)

An object of this invention is to provide an RIE apparatus, for instance, with which conditions for an etching process such as an etching speed can be set easily, precisely, and with repeatability, by, for instance, introducing a novel concept that is the flow rate of charged particles which can dir ...


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Kiyoshi Mitani, Kiyoshi Demizu, Isao Yokokawa, Tadahiro Ohmi, Shigetoshi Sugawa: Bonded wafer and method of producing bonded wafer. Shin Etsu Handotai, Oliff & Berridge, May 30, 2006: US07052974 (23 worldwide citation)

The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The pr ...


64
Tadahiro Ohmi, Keiji Hirao, Shigeaki Tanaka, Michio Yamaji, Hiroshi Morokoshi, Nobukazu Ikeda: Shutoff-opening device. Tadahiro Ohmi, Fujikin Incorporated, Armstrong Westerman Hattori McLeland & Naughton, November 23, 1999: US05988217 (23 worldwide citation)

A valve body has a main body formed with an inflow channel for a first fluid, an inflow channel for a second fluid, and an outflow channel for the first and second fluids in common. The first fluid inflow channel is always in communication with the common outflow channel through a valve chamber. A v ...


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Tadahiro Ohmi, Shigetoshi Sugawa, Masaki Hirayama, Yasuyukil Shirai: Semiconductor device. Tadahiro Ohmi, Finnegan Henderson Farabow Garrett & Dunner L, December 13, 2005: US06975018 (23 worldwide citation)

In a fabrication method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of a silicon surface in advance, and the hydrogen is removed by exposing the silicon surface to a first inert gas plasma. Thereafter, plasma is ...


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Shigetoshi Sugawa, Nobuyoshi Tanaka, Toshiji Suzuki, Tadahiro Ohmi, Tadanori Harada: Device and method of photoelectrically converting light into electrical signal. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 11, 1989: US04847668 (23 worldwide citation)

A photoelectric transducer device controls a potential of a control electrode region of a semiconductor transistor through a capacitor to perform a storage operation for storing carriers generated upon light excitation of the control electrode region, a read operation for reading a signal from a mai ...


67
Tadashi Shibata, Masahiro Konda, Tadahiro Ohmi: Computing circuit, computing apparatus, and semiconductor computing circuit. Semiconductor Technology Academic Research Center, Finnegan Henderson Farabow Garrett & Dunner L, February 10, 2004: US06691145 (22 worldwide citation)

A computing circuit capable of computing an absolute difference with high-speed analog computation, a computing apparatus capable of computing the sum of absolute differences and a semiconductor computing circuit achievable with simple circuitry and suitable for use in such a computing circuit or ap ...


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Tadahiro Ohmi, Tetu Kagazume, Kazuhiko Sugiyama, Ryousuke Dohi, Yukio Minami, Kouji Nishino, Kouji Kawata, Nobukazu Ikeda, Michio Yamaji: Fluid supply apparatus. Fujikin Incorporated, Tokyo Electron, Tadahiro Ohmi, Griffin & Szipl P C, January 30, 2001: US06178995 (22 worldwide citation)

A fluid feeding apparatus includes parallel flow passages connected at their downstream side, each parallel passage including a pressure flow controller (C) for regulating the flow of fluid and a fluid changeover valve (D) for opening and closing the passage on the downstream side of the pressure fl ...


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Hirohisa Kikuyama, Masayuki Miyashita, Tatsuhiro Yabune, Tadahiro Ohmi: Etchant. Stella Chemifa Kabushiki Kaisha, Randall J Knuth, July 1, 2003: US06585910 (21 worldwide citation)

An etching treatment agent which can etch insulating film with high speeds without damaging the resist pattern, provide realistic throughput when the insulting film etching process in the semiconductor manufacturing process is replaced with the single wafer processing etching treatment method, and p ...


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Kenichi Mitsumori, Yasuhiko Kasama, Koji Yamanaka, Takashi Imaoka, Tadahiro Ohmi: Wet treatment method. Organo Corporation, Tadahiro Ohmi, Fish & Richardson P C, July 21, 1998: US05783790 (21 worldwide citation)

A surfactant is added to anodic or cathodic water obtained by electrolyzing deionized water or high-purity water. Then, an object of treatment is treated with the anodic or cathodic water containing the surfactant. The object of treatment may be treated, in this way, while irradiating it with an ult ...