51
Takashi Imaoka, Hiroshi Morita, Isamu Sugiyama, Tadahiro Ohmi, Masaki Hirayama: Reductive heat exchange water and heat exchange system using such water. Organo Corporation, Rosenthal & Osha L, February 26, 2002: US06350376 (27 worldwide citation)

Heat exchange water for cooling an object of heat exchange such as machinery, air, or liquid, which serves to prevent oxidation and deterioration of metal materials used in pipes for supplying/circulating the heat exchange water or in the liquid ends of the heat exchanger, to suppress growth of alga ...


52
Tadahiro Ohmi, Satoshi Kagatsume, Jun Hirose, Kouji Nishino: Fluid-switchable flow rate control system. Fujikin Incorporated, Tadahiro Ohmi, Tokyo Electron, Griffin & Szipl P C, November 13, 2001: US06314992 (27 worldwide citation)

A fluid-switchable flow rate control system that permits free changing of the full scale flow rate and which can control a plurality of kinds of fluids with high precision. The fluid-switchable flow rate control system controls the flow rate of fluid with the pressure P


53
Tadahiro Ohmi, Kazuhiko Sugiyama, Fumio Nakahara, Masaru Umeda: Cylinder cabinet piping system. Tadahiro OHMI, Albert L Jeffers, Anthony Niewyk, September 26, 1989: US04869301 (25 worldwide citation)

The cylinder cabinet piping system of this invention has a system to supply a purge gas continuously to the main line, or to the main line and the branch line, thereby to prevent stagnation of gas in the purge gas line and to supply a super-high-purity gas to a process unit.


54
Jun ichi Nishizawa, Tadahiro Ohmi, Nobuo Takeda: Static induction transistor and semiconductor integrated circuit using hetero-junction. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, November 20, 1984: US04484207 (25 worldwide citation)

A hetero-junction static induction transistor (SIT) of normal or upside-down type to be operated by applying a forward bias across the gate and source regions, in which at least its source region and gate region among the source, drain and gate regions is formed with a material having a band gap bro ...


55
Nobuyuki Okamura, Atsushi Yamagami, Tadahiro Ohmi, Haruhiro Harry Goto, Tadashi Shibata: Plasma processing apparatus. Canon Kabushiki Kaisha Applied Materials Japan, Fitzpatrick Cella Harper & Scinto, March 17, 1998: US05728278 (24 worldwide citation)

A plasma processing apparatus has a vacuum container which contains a pair of electrodes for causing a discharge for generating a plasma, and a shielding plate for separating a plasma processing region including a space between the electrodes from a region in contact with the inner wall of the vacuu ...


56
Junichi Nishizawa, Tadahiro Ohmi: Insulated gate transistor having reduced channel length. Handotai Kenkyu Shinkokai, Sughrue Mion Zinn Macpeak & Seas, April 21, 1987: US04660062 (24 worldwide citation)

An insulated gate transistor including a semiconductor substrate, high impurity source and drain regions formed above a channel region of low conductivity, a high impurity concentration region having a conductivity type opposite to that of the source region, a gate insulating layer extending into th ...


57
Tadahiro Ohmi, Tsutomu Shinohara, Michio Yamaji, Nobukazu Ikeda, Kenji Yamamoto: Pipe joint with a gasket retainer. Fujikin Incorporated, Armstrong Westerman Hattori McLeland & Naughton, November 22, 1994: US05366261 (23 worldwide citation)

A pipe joint comprises a pair of tubular joint members having a gasket holding annular projection on each of butting faces thereof, an annular gasket interposed between the butting end faces of the joint members, and a nut for connecting the joint members together. When the nut is tightened up, an i ...


58
Tadahiro Ohmi, Kazuhiko Sugiyama, Fumio Nakahara, Satoshi Mizokami: Apparatus and method for oxidation treatment of metal. Tadahiro Ohmi, Baker & Daniels, July 13, 1993: US05226968 (23 worldwide citation)

A metal oxidation treatment apparatus to form the passivation film on the surface of the metal to be oxidized such as stainless steel or the like, comprising an oxidation furnace, a gas inlet to introduce gas into said oxidation furnace, a discharge outlet to discharge the gas from said oxidation fu ...


59
Tadahiro Ohmi, Yasuhiko Kasama, Hirobumi Fukui: Reactive ion etching device. Tadahiro Ohmi, Alps Electric, Baker & Daniels, May 16, 1995: US05415718 (23 worldwide citation)

An object of this invention is to provide an RIE apparatus, for instance, with which conditions for an etching process such as an etching speed can be set easily, precisely, and with repeatability, by, for instance, introducing a novel concept that is the flow rate of charged particles which can dir ...


60
Kiyoshi Mitani, Kiyoshi Demizu, Isao Yokokawa, Tadahiro Ohmi, Shigetoshi Sugawa: Bonded wafer and method of producing bonded wafer. Shin Etsu Handotai, Oliff & Berridge, May 30, 2006: US07052974 (23 worldwide citation)

The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The pr ...



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