11
Tadahiro Ohmi, Keiji Hirao, Yukio Minami, Michio Yamaji, Takashi Hirose, Nobukazu Ikeda: Fluid control device. Tadahiro Ohmi, Fujikin Incorporated, Armstrong Westerman Hattori McLeland & Naughton, July 10, 2001: US06257270 (59 worldwide citation)

A fluid control device has formed in a valve main body a main channel communicating with an inlet of a channel within a massflow controller, and a relatively long subchannel and a relatively short subchannel both communicating with the main channel. The process gas to be assure of high purity is pas ...


12
Tadahiro Ohmi, Tadashi Shibata, Masaru Umeda: Reduced pressure surface treatment apparatus. Tadahiro Ohmi, Baker & Daniels, May 5, 1992: US05110438 (59 worldwide citation)

The reduced pressure surface treatment apparatus according the present invention comprises at least one vacuum chamber and an exhaust unit and a gas supply unit connected thereto, and it is characterized in that it is provided with a holder to hold the specimen, means to bombard the specimen with io ...


13
Masaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera: Plasma process device. Tadahiro Ohmi, Sharp Kabushiki Kaisha, David G Conlin, David A Tucker, Dike Bronstein Roberts & Cushman IP Group Edwards & Angell, September 10, 2002: US06446573 (59 worldwide citation)

A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a m ...


14
Tadahiro Ohmi, Keiji Hirao, Yukio Minami, Michio Yamaji, Takashi Hirose, Nobukazu Ikeda: Fluid control device. Tadahiro Ohmi, Fujikin Incorporated, Armstrong Westerman Hattori McLeland and Naughton, November 2, 1999: US05975112 (59 worldwide citation)

A fluid control device has formed in a valve main body a main channel communicating with an inlet of a channel within a massflow controller, and a relatively long subchannel and a relatively short subchannel both communicating with the main channel. The process gas to be assure of high purity is pas ...


15
Tadahiro Ohmi, Nobuyoshi Tanaka: Photoelectric converter. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, August 11, 1987: US04686554 (59 worldwide citation)

A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n.sup.+ collector region an n.sup.- region disposed contiguous to the collector region, a p base region disposed contiguous to the n.sup.- region, an n. ...


16
Tadahiro Ohmi, Masaki Hirayama, Haruyuki Takano, Yusuke Hirayama: Plasma etching device. Tadahiro Ohmi, Tokyo Electron, Randall J Knuth, July 1, 2003: US06585851 (58 worldwide citation)

A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The ...


17
Tadahiro Ohmi, Masaki Hirayama, Haruyuki Takano, Yusuke Hirayama: Plasma etching device. Tadahiro Ohmi, Tokyo Electron, Young & Thompson, February 14, 2012: US08114245 (50 worldwide citation)

A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The ...


18
Tadahiro Ohmi, Akinobu Teramoto, Hidetoshi Wakamatsu, Yasuo Kobayashi: Semiconductor device and method for manufacturing the same. Tadahiro Ohmi, Tokyo Electron, Crowell & Moring, April 21, 2009: US07521324 (47 worldwide citation)

In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high stat ...


19
Tadahiro Ohmi, Koji Nishino, Nobukazu Ikeda, Akihiro Morimoto, Yukio Minami, Koji Kawada, Ryosuke Dohi, Hiroyuki Fukuda: Pressure type flow rate control apparatus. Fujikin Incorporated, Tadahiro Ohmi, Griffin Butler Whisenhunt & Szipl, October 6, 1998: US05816285 (47 worldwide citation)

A pressure type flow rate control apparatus (1) controls flow rate of a fluid in an environment where a ratio of P2/P1 between an absolute pressure P1 at an upstream side of an orifice and an absolute pressure P2 at a downstream side of the orifice is maintained at a value less than about 0.7. The a ...


20
Tadahiro Ohmi, Yohichi Kanno, Osamu Uchisawa, Kazuhiko Sato: Metal diaphragm valve. Motoyama Eng Works Lts, Nilsson Robbins Dalgarn Berliner Carson & Wurst, May 9, 1989: US04828219 (47 worldwide citation)

A metal diaphragm valve in which the interior of a valve casing is divided, by means of a metal diaphragm, thereby defining a valve chamber. Inlet hole and outlet hole are connected to the valve chamber. A valve seat is provided between the inlet and outlet holes, inside the valve chamber. A valve d ...