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Tadahiro Ohmi, Keiji Hirao, Yukio Minami, Michio Yamaji, Takashi Hirose, Nobukazu Ikeda: Fluid control device. Tadahiro Ohmi, Fujikin Incorporated, Armstrong Westerman Hattori McLeland & Naughton, July 10, 2001: US06257270 (58 worldwide citation)

A fluid control device has formed in a valve main body a main channel communicating with an inlet of a channel within a massflow controller, and a relatively long subchannel and a relatively short subchannel both communicating with the main channel. The process gas to be assure of high purity is pas ...


12
Tadahiro Ohmi, Keiji Hirao, Yukio Minami, Michio Yamaji, Takashi Hirose, Nobukazu Ikeda: Fluid control device. Tadahiro Ohmi, Fujikin Incorporated, Armstrong Westerman Hattori McLeland and Naughton, November 2, 1999: US05975112 (58 worldwide citation)

A fluid control device has formed in a valve main body a main channel communicating with an inlet of a channel within a massflow controller, and a relatively long subchannel and a relatively short subchannel both communicating with the main channel. The process gas to be assure of high purity is pas ...


13
Tadahiro Ohmi, Nobuyoshi Tanaka: Photoelectric converter. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, August 11, 1987: US04686554 (57 worldwide citation)

A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n.sup.+ collector region an n.sup.- region disposed contiguous to the collector region, a p base region disposed contiguous to the n.sup.- region, an n. ...


14
Tadahiro Ohmi, Yohichi Kanno, Osamu Uchisawa, Kazuhiko Sato: Metal diaphragm valve. Motoyama Eng Works Lts, Nilsson Robbins Dalgarn Berliner Carson & Wurst, May 9, 1989: US04828219 (47 worldwide citation)

A metal diaphragm valve in which the interior of a valve casing is divided, by means of a metal diaphragm, thereby defining a valve chamber. Inlet hole and outlet hole are connected to the valve chamber. A valve seat is provided between the inlet and outlet holes, inside the valve chamber. A valve d ...


15
Tadahiro Ohmi, Akinobu Teramoto, Hidetoshi Wakamatsu, Yasuo Kobayashi: Semiconductor device and method for manufacturing the same. Tadahiro Ohmi, Tokyo Electron, Crowell & Moring, April 21, 2009: US07521324 (46 worldwide citation)

In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high stat ...


16
Masaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera: Plasma process device. Tadahiro Ohmi, Sharp Kabushiki Kaisha, David G Conlin, David A Tucker, Dike Bronstein Roberts & Cushman IP Group Edwards & Angell, September 10, 2002: US06446573 (45 worldwide citation)

A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a m ...


17
Tadahiro Ohmi, Naomichi Yonekawa, Hiroyuki Horiki, Toshimitsu Kaji, Fumitomo Kunimoto, Takeo Tamaki: Rotary cleaning method with chemical solutions and rotary cleaning apparatus with chemical solutions. Tadahiro Ohmi, Nisso Engineering, MTC, Baker & Daniels, January 30, 1996: US05487398 (45 worldwide citation)

To provide a cleaning method and a cleaning apparatus for decreasing the total cost by producing high-performance semiconductor using silicon wafers with cleaner surface, decreasing the semiconductor production cost, decreasing the consumption of chemical solutions and the cleaning time by using a n ...


18
Tadahiro Ohmi, Takahisa Nitta, Masaki Hirayama, Haruyuki Takano, Ryu Kaiwara: Plasma device. Tadahiro Ohmi, Randall J Knuth, March 19, 2002: US06357385 (44 worldwide citation)

A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrod ...


19
Tadahiro Ohmi, Hiroshi Suzuki, Masaki Hirayama: Semiconductor device utilizing silicide reaction. Tadahiro Ohmi, Baker & Daniels, February 3, 1998: US05714795 (44 worldwide citation)

A semiconductor storage device capable of high-speed writing and reading and having extremely high reliability. The semiconductor device includes a plurality of cells each having a semiconductor layer between a pair of conductors. At least one of the pair of conductors is made of a metal and the sem ...


20
Tadahiro Ohmi, Masahiro Miki, Hirohisa Kikuyama, Matagoro Maeno: Metal material with film passivated by fluorination and apparatus composed of the metal material. Armstrong Nikaido Marmelstein Kubovcik & Murray, April 23, 1991: US05009963 (44 worldwide citation)

A metal material characterized in that a film passivated by fluorination which is mainly composed of a metal fluoride substantially satisfying stoichiometric ratio is formed at least partially on a surface of a metal of the metal material, and an apparatus at least partially composed of the metal ma ...



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