1
Tadahiro Ohmi: Device for plasma process. Baker & Daniels, December 21, 1993: US05272417 (133 worldwide citation)

A plasma process device for a generating a plasma in a container under reduced pressure and for processing an object. First and second electrodes are placed in opposed positions in the container. The electrodes are plate-like in shape. A protective member made of a stable material covers the first e ...


2
Jun ichi Nishizawa, Tadahiro Ohmi: Short channel MOSFET with buried anti-punch through region. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, January 24, 1995: US05384476 (100 worldwide citation)

A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further incl ...


3
Yoshio Ishihara, Masayuki Toda, Tadahiro Ohmi: Process for laser detection of gas and contaminants in a wafer transport gas tunnel. Nippon Sanso Corporation, Darby & Darby, September 14, 1999: US05953591 (78 worldwide citation)

A process of using a transport system for transporting substrate wafer, for making semiconductor integrated circuits and liquid crystal display panels and the like advanced devices, is presented. The object is to prevent surface degradation which may be inflicted on the surface to interfere with pro ...


4
Tadahiro Ohmi, Nobuyoshi Tanaka, Takeo Ushiki, Toshikuni Shinohara, Takahisa Nitta: SOI bonding structure. Canon Kabushiki Kaisha, Tadahiro Ohmi, Ultraclean Technology Research Institute, Fitzpatrick Cella Harper & Scinto, July 3, 2001: US06255731 (77 worldwide citation)

A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material l ...


5
Jun ichi Nishizawa, Tadahiro Ohmi: Semiconductor fabricating apparatus. Handotai Kenkyu Shinkokai, Sughrue Mion Zinn Macpeak and Seas, December 17, 1985: US04558660 (75 worldwide citation)

A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an in ...


6

7
Tadahiro Ohmi, Michio Yamaji, Nobukazu Ikeda, Masayuki Hatano, Kosuke Yokoyama, Shigeaki Tanaka: Shutoff-opening devices and fluid control apparatus comprising such devices. Tadahiro Ohmi, Fujikin Incorporated, Armstrong Westerman Hattori McLeland and Naughton, March 14, 2000: US06035893 (68 worldwide citation)

A valve main body is internally formed with a main channel extending from a rear end face thereof nearly to a first valve actuator, and two subchannels communicating with the main channel via second and third valve actuators, respectively. The valve main body has a slanting face extending forwardly ...


8
Tadahiro Ohmi, Mamoru Miyawaki, Yoshio Nakamura, Hiroshi Suzuki, Takeo Yamashita: Semiconductor devices utilizing silicide reaction. Canon Kabushiki Kaisha, Tadahiro Ohmi, Fitzpatrick Cella Harper & Scinto, April 18, 2000: US06051851 (62 worldwide citation)

Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the ...


9
Tadahiro Ohmi: Wafer susceptor. Oblon Spivak McClelland Maier & Neustadt, January 30, 1990: US04897171 (58 worldwide citation)

A wafer susceptor is disclosed. The wafer susceptor has: a first conductive electrode which includes its flat surface covered with a thin insulating film; a second conductive electrode which is electrically insulated from the first conductive electrode and is disposed so that the surface thereof is ...


10
Tadahiro Ohmi, Tadashi Shibata, Masaru Umeda: Reduced pressure surface treatment apparatus. Tadahiro Ohmi, Baker & Daniels, May 5, 1992: US05110438 (58 worldwide citation)

The reduced pressure surface treatment apparatus according the present invention comprises at least one vacuum chamber and an exhaust unit and a gas supply unit connected thereto, and it is characterized in that it is provided with a holder to hold the specimen, means to bombard the specimen with io ...



Click the thumbnails below to visualize the patent trend.