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Tadahiro Ohmi: Device for plasma process. Baker & Daniels, December 21, 1993: US05272417 (138 worldwide citation)

A plasma process device for a generating a plasma in a container under reduced pressure and for processing an object. First and second electrodes are placed in opposed positions in the container. The electrodes are plate-like in shape. A protective member made of a stable material covers the first e ...


2
Jun ichi Nishizawa, Tadahiro Ohmi: Short channel MOSFET with buried anti-punch through region. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, January 24, 1995: US05384476 (113 worldwide citation)

A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further incl ...


3
Yoshio Ishihara, Masayuki Toda, Tadahiro Ohmi: Process for laser detection of gas and contaminants in a wafer transport gas tunnel. Nippon Sanso Corporation, Darby & Darby, September 14, 1999: US05953591 (102 worldwide citation)

A process of using a transport system for transporting substrate wafer, for making semiconductor integrated circuits and liquid crystal display panels and the like advanced devices, is presented. The object is to prevent surface degradation which may be inflicted on the surface to interfere with pro ...


4
Tadahiro Ohmi, Nobuyoshi Tanaka, Takeo Ushiki, Toshikuni Shinohara, Takahisa Nitta: SOI bonding structure. Canon Kabushiki Kaisha, Tadahiro Ohmi, Ultraclean Technology Research Institute, Fitzpatrick Cella Harper & Scinto, July 3, 2001: US06255731 (82 worldwide citation)

A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material l ...


5
Jun ichi Nishizawa, Tadahiro Ohmi: Semiconductor fabricating apparatus. Handotai Kenkyu Shinkokai, Sughrue Mion Zinn Macpeak and Seas, December 17, 1985: US04558660 (80 worldwide citation)

A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an in ...


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Tadahiro Ohmi, Michio Yamaji, Nobukazu Ikeda, Masayuki Hatano, Kosuke Yokoyama, Shigeaki Tanaka: Shutoff-opening devices and fluid control apparatus comprising such devices. Tadahiro Ohmi, Fujikin Incorporated, Armstrong Westerman Hattori McLeland and Naughton, March 14, 2000: US06035893 (70 worldwide citation)

A valve main body is internally formed with a main channel extending from a rear end face thereof nearly to a first valve actuator, and two subchannels communicating with the main channel via second and third valve actuators, respectively. The valve main body has a slanting face extending forwardly ...


8
Masaki Hirayama, Tadahiro Ohmi, Tatsushi Yamamoto, Takamitsu Tadera: Plasma process device. Tadahiro Ohmi, Sharp Kabushiki Kaisha, David G Conlin, David A Tucker, Dike Bronstein Roberts & Cushman IP Group Edwards & Angell, September 10, 2002: US06446573 (64 worldwide citation)

A plasma process device capable of forming homogeneous plasma and coping with a large size substrate less costly can be obtained. The plasma process device includes a processing chamber, microwave guiding means, a shower plate and a reaction gas supply passage. The microwave guiding means guides a m ...


9
Akira Nakano, Tadahiro Ohmi: Plasma processing apparatus and method capable of performing uniform plasma treatment by control of excitation power. Alps Electric, Tadahiro Ohmi, Beyer Weaver & Thomas, September 21, 2004: US06792889 (64 worldwide citation)

A plasma processing apparatus includes a chassis accommodating an impedance matching circuit. The impedance matching circuit is placed between an RF generator and a plasma excitation electrode. Magnetic probes for detecting a magnetic field generated at a slit in a sidewall of the chassis are placed ...


10
Tadahiro Ohmi, Mamoru Miyawaki, Yoshio Nakamura, Hiroshi Suzuki, Takeo Yamashita: Semiconductor devices utilizing silicide reaction. Canon Kabushiki Kaisha, Tadahiro Ohmi, Fitzpatrick Cella Harper & Scinto, April 18, 2000: US06051851 (62 worldwide citation)

Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the ...