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Pawloski Adam R, Ado Amr Y, Amblard Gilles R, Lafontaine Bruno M, Lalovic Ivan, Levinson Harry J, Schefske Jeffrey A, Tabery Cyrus E, Tsai Frank: Immersion medium bubble elimination in immersion lithography. Advanced Micro Devices, Pawloski Adam R, Ado Amr Y, Amblard Gilles R, Lafontaine Bruno M, Lalovic Ivan, Levinson Harry J, Schefske Jeffrey A, Tabery Cyrus E, Tsai Frank, sCOLLOPY Daniel R, March 10, 2005: WO/2005/022266 (352 worldwide citation)

A method of operating an immersion lithography system (26), including steps of immersing at least a portion of a wafer (12) to be exposed in an immersion medium (24), wherein the immersion medium comprises at least one bubble (28); directing an ultrasonic wave (36) through at least a portion of the ...


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Minvielle Anna M, Tabery Cyrus E, Kim Hung Eil, Kye Jongwook: System and method for fabricating contact holes. Advanced Micro Devices, Minvielle Anna M, Tabery Cyrus E, Kim Hung Eil, Kye Jongwook, sDRAKE Paul S, November 3, 2005: WO/2005/103828 (3 worldwide citation)

A method of forming a plurality of contact holes (20, 24) of varying pitch and density in a contact layer (56) of an integrated circuit device (10) is provided . The plurality of contact holes (20, 24) can include a plurality of regularly spaced contact holes (20) having a first pitch along a first ...


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Tabery Cyrus E, Lyons Christopher F: Method of using an amorphous carbon layer for improved reticle fabrication. Advanced Micro Devices, sCOLLOPY Daniel R, January 15, 2004: WO/2004/006014 (1 worldwide citation)

A method of using an amorphous carbon layer (130) for improved reticle fabrication includes depositing a stack of layers including a substrate (110), an absorber (120), a transfer layer (130), an anti­reflective coating (ARC) layer (140), and a photoresist layer (150), patterning (45) the photoresis ...


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Tabery Cyrus E, Ahmed Shibly S, Buynoski Matthew S, Dakshina Murphy Srikanteswara, Krivokapic Zoran, Wang Haihong, Yang Chih Yuh, Yu bin: Self aligned damascene gate. Advanced Micro Devices, Tabery Cyrus E, Ahmed Shibly S, Buynoski Matthew S, Dakshina Murphy Srikanteswara, Krivokapic Zoran, Wang Haihong, Yang Chih Yuh, Yu bin, sDRAKE PAUL S, May 26, 2005: WO/2005/048339 (1 worldwide citation)

A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) (200) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin (310) in the fin area, and forming a mask (320) in the fin area. The method further includes etching the mask (320 ...


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Lin Ming Ren, An Judy Xilin, Krivokapic Zoran, Tabery Cyrus E, Wang Haihong, Yu bin: Double and triple gate mosfet devices and methods for making same. Advanced Micro Devices, sCOLLOPY Daniel R, May 6, 2004: WO/2004/038808 (1 worldwide citation)

A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin (220), a first gate (240) and a second gate (420). The first gate (240) is formed on top of the fin (220). The second gate (420) surrounds the fin (220) and the first gate (240). In another implementation, a trip ...


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Tabery Cyrus E, Ahmed Shibly S, Buynoski Matthew S, Dakshina Murphy Srikanteswara, Krivokapic Zoran, Wang Haihong, Yu bin, Yang Chih Yuh: Self aligned damascene gate. Advanced Micro Devices, September 27, 2006: GB2424517-A

A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) (200) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin (310) in the fin area, and forming a mask (320) in the fin area. The method further includes etching the mask (320 ...


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Minivielle Anna M, Tabery Cyrus E, Kim Hung Eil, Kye Jongwook: System and method for fabricating contact holes. Advanced Micro Devices, January 17, 2007: GB2428109-A

A method of forming a plurality of contact holes (20, 24) of varying pitch and density in a contact layer (56) of an integrated circuit device (10) is provided. The plurality of contact holes (20, 24) can include a plurality of regularly spaced contact holes (20) having a first pitch along a first d ...


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