1
Pekka J Soininen, Kai Erik Elers, Suvi Haukka: Method of growing electrical conductors by reducing metal oxide film with organic compound containing -OH, -CHO, or -COOH. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, November 19, 2002: US06482740 (293 worldwide citation)

This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reduc ...


2
Suvi Haukka, Hannu Huotari: Method of depositing barrier layer for metal gates. ASM International, Knobbe Martens Olson & Bear, February 22, 2005: US06858524 (109 worldwide citation)

A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The m ...


3
Hannu Huotari, Suvi Haukka, Marko Tuominen: Method of forming an electrode with adjusted work function. ASM International, Knobbe Martens Olson & Bear, May 16, 2006: US07045406 (87 worldwide citation)

A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate electrode material in the region that determines the work function of the gate electrode during the gate elec ...


4
Ivo Raaijmakers, Pekka T Soininen, Ernst Granneman, Suvi Haukka, Kai Erik Elers, Marko Tuominen, Hessel Sprey, Herbert Terhorst, Menso Hendriks: Sealing porous structures. ASM Microchemistry Oy, Knobbe Martens Olson & Bear, July 6, 2004: US06759325 (70 worldwide citation)

Method and structures are provided for conformal lining of dual damascene structures in integrated circuits, and particularly of openings formed in porous materials. Trenches and contact vias are formed in insulating layers. The pores on the sidewalls of the trenches and vias are blocked, and then t ...


5
Eva Tois, Suvi Haukka, Marko Tuominen: Method of growing oxide thin films. ASM International, Knobbe Martens Olson & Bear, November 2, 2010: US07824492 (60 worldwide citation)

Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound whi ...


6
Pekka J Soininen, Kai Erik Elers, Suvi Haukka: Method of growing electrical conductors. ASM International, Knobbe Martens Olson & Bear, May 3, 2005: US06887795 (55 worldwide citation)

This invention relates to manufacturing of integrated circuits (ICs) and especially conductive layers suitable for use in an IC. According to the preferred method a metal oxide thin film is deposited on a substrate surface and reduced thereafter essentially into a metallic form with an organic reduc ...


7
Jerry Chen, Vladimir Machkaoutsan, Brennan Milligan, Jan Willem Maes, Suvi Haukka, Eric Shero, Tom E Blomberg, Dong Li: Silane and borane treatments for titanium carbide films. ASM IP Holding, Knobbe Martens Olson & Bear, September 23, 2014: US08841182 (53 worldwide citation)

Methods of treating metal-containing thin films, such as films comprising titanium carbide, with a silane/borane agent are provided. In some embodiments a film including titanium carbide is deposited on a substrate by an atomic layer deposition (ALD) process. The process may include a plurality of d ...


8
Naoto Tsuji, Atsuki Fukazawa, Noboru Takamure, Suvi Haukka, Antti Juhani Niskanen, Hyung Sang Park: Method for forming Si-containing film using two precursors by ALD. ASM IP Holding, Snell & Wilmer L, December 16, 2014: US08912101 (52 worldwide citation)

A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which ...


9
Suvi Haukka, Eric James Shero, Fred Alokozai, Dong Li, Jereld Lee Winkler, Xichong Chen: Method for treatment of deposition reactor. ASM IP Holding, Snell & Wilmer, January 5, 2016: US09228259 (39 worldwide citation)

A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a rea ...


10
Juhana Kostamo, Pekka J Soininen, Kai Erik Elers, Suvi Haukka: Method of growing electrical conductors. ASM International, Knobbe Martens Olson & Bear, February 24, 2009: US07494927 (37 worldwide citation)

A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing agent, thereby for ...