1
Jung Wook Lim, Sun Jin Yun, Jin Ho Lee: Method of forming a thin film in a semiconductor device. Electronics and Telecommunications Research Institute, Jacobson & Holman PLLC, May 4, 2004: US06730614 (67 worldwide citation)

The present invention relates to a method of forming a thin film in a semiconductor device. According the method, the thin film is formed by alternately repeating an atomic layer deposition (ALD) method and a plasma enhanced atomic layer deposition (PEALD) method and further by adjusting the ratio o ...


2
Yun Sun Jin, Kin Ryushin, Boku Soki: Manufacture of pbx (x/s or se) thin film, and electro- luminescent element containing pbx and its manufacture. Korea Electronics Telecommun, May 16, 2000: JP2000-138094 (63 worldwide citation)

PROBLEM TO BE SOLVED: To uniformize thickness and to stabilize reactivity by growing a PbS thin film by the atomic layer vapor deposition method or the chemical vapor deposition method, using an organic metal compound. SOLUTION: Regarding the method for manufacturing a PBX (X=S or Se) thin film, an ...


3
Duan Youlu, Jin Shanrong, Huang Tingchun, Sun Jin, Yu Xinying: Fluoropolymer alloys. Shanghai Institute of Organic Chemistry Academia Sinica, Ladas & Parry, June 7, 1988: US04749752 (53 worldwide citation)

Fluoropolymer alloys made of melt fabricatable extra-high-molecular weight fluorinated ethylene-propylene copolymer (EHMW-FEP) and one or more other polymers. In fluoropolymer alloys made of EHMW-FEP and polytetrafluoroethylene, the weight percentage of the former is 0.1-99.9% and the latter is 99.9 ...


4
Jung wook Lim, Sun jin Yun: Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition. Electronics and Telecommunications Research Institute, Blakely Sokoloff Taylor & Zafman, April 20, 2004: US06723642 (32 worldwide citation)

A method for forming a nitrogen-containing oxide thin film by using plasma enhanced atomic layer deposition is provided. In the method, the nitrogen-containing oxide thin film is deposited by supplying a metal source compound and oxygen gas into a reactor in a cyclic fashion with sequential alternat ...


5
Sung Jin Kim, Sun Jin Son: Printed circuit board for semiconductor package and method for manufacturing the same. Amkor Technology, James E Parsons, Skjerven Morrill, November 5, 2002: US06476331 (22 worldwide citation)

A printed circuit board for a semiconductor package, a semiconductor package, and methods for manufacturing the same are disclosed. One printed circuit board includes a core layer with circuit patterns formed thereon. The circuit patterns do not extend to a periphery of the circuit board. Each circu ...


6
G David Roodman, Sakamuri V Reddy, Sun Jin Choi: Compositions and methods of use for osteoclast inhibitor factors. Board of Regents The University of Texas System, Arnold White & Durkee, November 16, 1999: US05985832 (19 worldwide citation)

It has been found that two proteins produced by human osteoclasts inhibit osteoclast formation in bone marrow cultures and inhibit bone resorption in a fetal long bone assay. One of the proteins is identical to an Ly6 gene family protein and homologous to the Sca2 antigen, Ly6A. The second, OIP-2, i ...


7
Sang Hee Park, Sun Jin Yun, Young Shin Kim, Yong Eui Lee: Flat panel display device and method of forming passivation film in the flat panel display device. Electronics and Telecommunications Research Institute, Blakely Sokolff Taylor & Zafman, August 9, 2005: US06926572 (12 worldwide citation)

A method of forming a passivation film in a flat panel display device includes forming the flat panel display device on a substrate, bringing the flat panel display device into a chamber in order to form the passivation film, injecting precursors containing constituent elements of the passivation fi ...


8
JungWook Lim, Sun Jin Yun, Hyun Tak Kim: Logic circuit using metal-insulator transition (MIT) device. Electronics and Telecommunications Research Institute, Rabin & Berdo P C, September 7, 2010: US07791376 (10 worldwide citation)

Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage VT; a power source unit ...


9
Sun Jin Yun, Joong Whan Lee: Method for manufacturing phosphor-coated particles and method for forming cathodoluminescent screen using the same for field emission display. Electronics and Telecommunications Research Institute, Jacobson Holman PLLC, September 10, 2002: US06447908 (10 worldwide citation)

A method for forming a cathodoluminescent screen by forming cathodoluminescent films on the inner surface of screen panel for a field emission display by a screen printing, a spray, or an electrodeposition process. The field emission display cathodoluminescent particles for improving a luminescent e ...


10
Terry W Davis, Sun Jin Son: Conformal shield on punch QFN semiconductor package. Amkor Technology, Stetina Brunda Garred & Brucker, June 14, 2011: US07960818 (7 worldwide citation)

In accordance with the present invention, there is provided a punch quad flat no leads (QFN) semiconductor package including a leadframe wherein the leads of the leadframe are selectively half-etched so that only one or more prescribed leads may be electrically connected to a conformal shield applie ...



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