1
James Stuart Dunn, David L Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St Onge: Epitaxial base bipolar transistor with raised extrinsic base. International Business Machines Corporation, Anthony Canale, Scully Scott Murphy & Presser, November 2, 2004: US06812545 (20 worldwide citation)

An epitaxial base bipolar transistor comprising an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on the semiconductor surface; a raised extrinsic base on the surface of the semiconductor substrate; an insulator between the raised emitter and the raised extrins ...


2
James Stuart Dunn, Peter Brian Gray, Kenneth Knetch Kieft III, Nicholas Theodore Schmidt, Stephen St onge: Method of contacting a silicide-based schottky diode. International Business Machines Corporation, William D Sabo, Schmeiser Olsen & Watts, September 19, 2000: US06121122 (13 worldwide citation)

A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicid ...


3
James Stuart Dunn, Peter Brian Gray, Kenneth Knetch Kieft III, Nicholas Theodore Schmidt, Stephen St onge: Method of contacting a silicide-based schottky diode and diode so formed. International Business Machines Corporation, William D Sabo, Schmeiser Olsen & Watts, July 22, 2003: US06597050 (9 worldwide citation)

A method of contacting a silicide-based Schottky diode including the step of providing a contact to the silicide that is fully bordered with respect to an internal edge of the guard ring area. A Schottky diode having silicide contacting a guard ring of the Schottky diode and a contact to the silicid ...


4
James Stuart Dunn, David L Harame, Jeffrey Bowman Johnson, Robb Allen Johnson, Louis DeWolf Lanzerotti, Stephen Arthur St Onge: Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base. International Business Machines Corporation, Anthony Canale, Scully Scott Murphy & Presser, September 9, 2003: US06617220 (8 worldwide citation)

An epitaxial base bipolar transistor including an epitaxial single crystal layer on a single crystal single substrate; a raised emitter on a portion of the single crystal layer; a raised extrinsic base on a surface of the semiconductor substrate; an insulator between the raised emitter and the raise ...


5
Jack Oon Chu, Douglas Duane Coolbaugh, James Stuart Dunn, David R Greenberg, David L Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich: Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology. International Business Machines Corporation, William D Sabo, Scully Scott Murphy & Presser, July 30, 2002: US06426265 (7 worldwide citation)

A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of sa ...


6
Douglas Duane Coolbaugh, James Stuart Dunn, Stephen Arthur St Onge: Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme. International Business Machines Corporation, William D Sabo, Scully Scott Murphy & Presser, August 27, 2002: US06440811 (6 worldwide citation)

A method for fabricating a poly-poly capacitor integrated with a BiCMOS process which includes forming a lower plate electrode of a poly-poly capacitor during deposition of a gate electrode of a CMOS transistor; and forming an upper SiGe plate electrode during growth of a SiGe base region of a heter ...


7
Douglas D Coolbaugh, James Stuart Dunn, Stephen Arthur St Onge: Poly-poly/MOS capacitor having a gate encapsulating first electrode layer. International Business Machines Corporation, William D Sabo Esq, Scully Scott Murphy & Presser, January 14, 2003: US06507063 (6 worldwide citation)

A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first pol ...


8
James Stuart Dunn, Zhong Xiang He, Anthony K Stamper: Method of manufacturing complimentary metal-insulator-metal (MIM) capacitors. International Business Machines Corporation, Anthony Canale, Roberts Mlotkowski Safran & Cole P C, February 19, 2013: US08375539 (5 worldwide citation)

A method of manufacturing a low capacitance density, high voltage MIM capacitor and the high density MIM capacitor. The method includes depositing a plurality of plates and a plurality of dielectric layers interleaved with one another. The method further includes etching a portion of an uppermost pl ...


9
Jack Oon Chu, Douglass Duane Coolbaugh, James Stuart Dunn, David R Greenberg, David L Harame, Basanth Jagannathan, Robb Allen Johnson, Louis D Lanzerotti, Kathryn Turner Schonenberg, Ryan Wayne Wuthrich: Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology. International Business Machines Corporation, William D Sabo Esq, Scully Scott Murphy & Presser, November 9, 2004: US06815802 (3 worldwide citation)

A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of sa ...


10
Douglas D Coolbaugh, James Stuart Dunn, Stephen Arthur St Onge: Method of fabricating a stacked poly-poly and MOS capacitor using a sige integration scheme. International Business Machines Corporation, William D Sabo Esq, Scully Scott Murphy & Presser, December 21, 2004: US06833299 (2 worldwide citation)

A stacked Poly-Poly/MOS capacitor useful as a component in a BiCMOS device comprising a semiconductor substrate having a region of a first conductivity-type formed in a surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first conductivity-type; a first pol ...