1
Brian Sze Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst: Field effect transistor and method of its manufacture. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, August 6, 2002: US06429481 (180 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


2
Steven Sapp: Dual trench power MOSFET. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 23, 2004: US06710403 (161 worldwide citation)

In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region of a first conductivity type, a gate trench which extends into the first semiconductor region, and a source trench which extends into the first semiconductor region. The source trench is lateral ...


3
Rajeev Joshi, Steven Sapp: Semiconductor die package with improved thermal and electrical performance. Fairchild Semiconductor Corporation, Townsend Townsend and Crew, May 20, 2003: US06566749 (79 worldwide citation)

A semiconductor die package is disclosed. In one embodiment, the package includes a semiconductor die comprising a vertical power transistor. A source electrode and a gate contact region are at the first surface of the semiconductor die. A drain electrode is at the second surface of the semiconducto ...


4
Peter H Wilson, Steven Sapp: Trench-gate LDMOS structures. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, August 18, 2009: US07576388 (67 worldwide citation)

MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in ...


5
Steven Sapp, Peter H Wilson: Vertical charge control semiconductor device. Fairchild Semiconductor Corporation, Townsend and Townsend ans Crew, October 12, 2004: US06803626 (51 worldwide citation)

In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region therebetween, and at least one resistive element located along an outer periphery of each of the two insu ...


6
Hamza Yilmaz, Daniel Calafut, Steven Sapp, Nathan Kraft, Ashok Challa: Charge balance field effect transistor. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, July 1, 2008: US07393749 (48 worldwide citation)

A field effect transistor is formed as follows. A semiconductor region of a first conductivity type with an epitaxial layer of a second conductivity extending over the semiconductor region is provided. A trench extending through the epitaxial layer and terminating in the semiconductor region is form ...


7
Steven Sapp, Hamza Yilmaz, Christopher Lawrence Rexer, Daniel Calafut: Method of forming trench gate field effect transistor with recessed mesas. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, March 17, 2009: US07504306 (45 worldwide citation)

A monolithically integrated field effect transistor and Schottky diode includes gate trenches extending into a semiconductor region. Source regions having a substantially triangular shape flank each side of the gate trenches. A contact opening extends into the semiconductor region between adjacent g ...


8
Brian Sze Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst: Field effect transistor and method of its manufacture. Fairchild Semiconductor Corporation, Babak S Sani, Townsend and Townsend and Crew, March 23, 2004: US06710406 (38 worldwide citation)

A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each ...


9
Daniel Calafut, Izak Bencuya, Steven Sapp: Integrated zener diode protection structures and fabrication methods for DMOS power devices. National Semiconductor Corporation, Limbach & Limbach L, February 11, 1997: US05602046 (37 worldwide citation)

In one embodiment, modifications to the polysilicon gate, body, source, and contact masks of a DMOS process add a source-body monocrystalline gate protection diode under the gate pad by implanting an anode region beneath the gate. The anode is connected to the gate through the gate metal in the pad. ...


10
Peter H Wilson, Steven Sapp, Neill Thornton: Trench gate laterally diffused MOSFET devices and methods for making such devices. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, April 25, 2006: US07033891 (32 worldwide citation)

A MOSFET device for RF applications that uses a trench gate in place of the lateral gate used in lateral MOSFET devices is described. The trench gate in the devices of the invention is provided with a single, short channel for high frequency gain. The device of the invention is also provided with an ...