1
Raymond A Fillion, Eric J Wildi, Charles S Korman, Sayed Amr El Hamamsy, Steven M Gasworth, Michael W DeVre, James F Burgess: Direct stacked and flip chip power semiconductor device structures. General Electric Company, Marvin Snyder, July 2, 1996: US05532512 (191 worldwide citation)

Power semiconductor device structures and assemblies with improved heat dissipation characteristics and low impedance interconnections include a thermally-conductive dielectric layer, such as diamondlike carbon (DLC) overlying at least portions of the active major surface of a semiconductor chip, wi ...


2
Steven M Gasworth: Diamond crystal growth apparatus. General Electric Company, November 16, 1993: US05261959 (67 worldwide citation)

The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.


3
Steven M Gasworth: Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom. General Electric Company, William H Pittman, April 20, 1993: US05204145 (51 worldwide citation)

An improved method and apparatus are disclosed for producing large area diamond depositions. A mixture of a carbon compound such as methane, hydrogen and argon is introduced into a DC arc plasma torch to form a plasma jet. The plasma jet is directed and trapped into a partially enclosed chemical vap ...


4
Charles D Iacovangelo, Thomas Miebach, Michael W Mercedes, Steven M Gasworth, Michael R Haag: Expanding thermal plasma deposition system. Exatec L L C, Brinks Hofer Gilson & Lione, September 29, 2009: US07595097 (20 worldwide citation)

A system to coat a substrate includes a deposition chamber maintained at sub-atmospheric pressure, one or more arrays containing two or more expanding thermal plasma sources associated with the deposition chamber, and at least one injector containing orifices for each array. The substrate is positio ...


5
Steven M Gasworth: Diamond crystal growth process. General Electric Company, Gary L Loser, April 28, 1992: US05108779 (20 worldwide citation)

The steady state operating parameters of a low pressure chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.


6
Steven M Gasworth: Rugate filter and method of making same. Lockheed Martin Corporation, Robert A Schruhl, January 4, 2000: US06010756 (15 worldwide citation)

The invention is a method of depositing a rugate filter coating on a substrate, with the coating having an index of refraction that varies with the depth thereof. In detail, the method comprising the steps of: a) placing the substrate in an apparatus capable of depositing the coating by a plasma-enh ...


7
Steven M Gasworth, Mark Peters, Ralf Dujardin: Polycarbonate automotive window panels with coating system blocking UV and IR radiation and providing abrasion resistant surface. Exatec, Brinks Hofer Gilson & Lione, September 28, 2004: US06797384 (15 worldwide citation)

An automotive glazing panel is provided by a polycarbonate substrate having a coating system including an inner layer blocking IR and overlying coating material blocking UV radiation and providing a scratch resistant outer coating layer.


8
Michael W DeVre, Steven M Gasworth: Capacitor dielectrics of silicon-doped amorphous hydrogenated carbon. General Electric Company, William H Pittman, October 29, 1996: US05569487 (7 worldwide citation)

Capacitors with high dielectric strength and low dissipation factor over a wide range of frequencies comprise two or more conductive layers separated by at least one dielectric layer. The dielectric layer is of silicon-doped amorphous hydrogenated carbon, with suitable dopants including silane (whic ...


9
Steven M Gasworth: Plasma coating system for accommodating substrates of different shapes. Exatec, Brinks Hofer Gilson & Lione, January 12, 2010: US07645492 (5 worldwide citation)

A plasma coating system includes at least one coating station with a first side and a second side defining a pathway with at least one bend. The coating station also includes a first plasma arc that provides a plasma jet directed towards a substrate. The first plasma arc is positioned on either the ...


10
Steven M Gasworth: Cyclic hot-filament CVD of diamond. General Electric Company, May 14, 1996: US05516554 (4 worldwide citation)

The steady state operating parameters of a low pressure cyclic hot-filament chemical vapor deposition process for making diamond, i.e., nucleation-growth and graphite removal, are applied as controlled sequential steps to favor nucleation and growth.