1
Leping Li, Steven G Barbee, Arnold Halperin, Tony F Heinz: In-situ monitoring of the change in thickness of films. International Business Machines Corporation, Alison D Mortinger, September 24, 1996: US05559428 (118 worldwide citation)

The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are ...


2
Steven G Barbee, James M Leas, James R Lloyd, Arunachala Nagarajan: Thin film semiconductor device and method for manufacture. International Business Machines Corporation, Mitchell S Bigel, August 23, 1983: US04400715 (104 worldwide citation)

A process for the preparation of a semiconductor device in a thin film of a monocrystalline semiconductor material supported on the surface of a substrate. In the process a thin film of a monocrystalline semiconductor material is formed on a substrate. The film of monocrystalline semiconductor mater ...


3
Steven G Barbee, Gregory P Devine, William J Patrick, Gerard Seeley: Method for vacuum vapor deposition with improved mass flow control. International Business Machines Corporation, Graham S Jones II, January 5, 1988: US04717596 (60 worldwide citation)

A method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gaseous materia ...


4
Steven G Barbee, Gregory P Devine, William J Patrick, Gerard Seeley: Vacuum deposition system with improved mass flow control. International Business Machines Corporation, Douglas A Lashmit, February 3, 1987: US04640221 (56 worldwide citation)

A system and method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gase ...


5
Steven G Barbee, Leping Li, Victor J Silvestri: Interferometer for in situ measurement of thin film thickness changes. International Business Machines Corporation, Richard A Romanchik, Michael J Balconi Lamica, June 15, 1993: US05220405 (42 worldwide citation)

An interferometer 10 for measuring the position of the process surface 21 of a substrate 20 includes a coherent light source 12 for providing a light beam 14 which is partially transmitted and partially reflected by a beam splitter 16. The reflected light beam 18 is reflected off of the process surf ...


6
Wesley C Natzle, David C Ahlgren, Steven G Barbee, Marc W Cantell, Basanth Jagannathan, Louis D Lanzerotti, Seshadri Subbanna, Ryan W Wuthrich: Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling. International Business Machines Corporation, Graham S Jones II, Jay H Anderson, February 22, 2005: US06858532 (25 worldwide citation)

An oxide etch process is described which may be used for emitter and base preparation in bipolar SiGe devices. The low temperature process employed produces electrical insulation between the emitter and base by a COR etch which preserves insulating TEOS glass. The insulating TEOS glass provides redu ...


7
Steven G Barbee, Tony F Heinz, Ulrich Hofer, Leping Li, Victor J Silvestri: Method and apparatus for real-time, in-situ endpoint detection and closed loop etch process control. International Business Machines Corporation, Michael J Balconi Lamica, February 21, 1995: US05392124 (23 worldwide citation)

A method and apparatus for detecting an etching endpoint of a film on a substrate whereby a first excitation beam of light having a prescribed wavelength is provided, the first light beam substantially containing only a first harmonic component of light at that wavelength. The first light beam is di ...


8
Steven G Barbee, Tony F Heinz, Leping Li, Eugene H Ratzlaff: Contactless real-time in-situ monitoring of a chemical etching process. International Business Machines Corporation, Michael J Balconi Lamica, August 16, 1994: US05338390 (19 worldwide citation)

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, said at least ...


9
Michael J Balconi Lamica, Steven G Barbee, Tony F Heinz, Yiping Hsiao, Leping Li, Eugene H Ratzlaff, Justin Wai chow Wong: Contactless real-time in-situ monitoring of a chemical etching. International Business Machines Corporation, Dale M Crockatt, May 14, 1996: US05516399 (17 worldwide citation)

A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the a ...


10
Steven G Barbee, Hung Chang Huang, Donald J Hunt, Jungihl Kim, Jae M Park, Charles H Perry, Da Yuan Shih: Strengthening a ceramic by post sinter coating with a compressive surface layer. International Business Machines Corporation, Daniel P Morris, November 1, 1988: US04781970 (15 worldwide citation)

Strengthened ceramic and a method for increasing the mechanical strength of fully sintered ceramic articles, in particular alumina type ceramic and glass-ceramic articles. Such articles are strengthened by forming a compresssive material layer of amorphous silicon dioxide or refractory metal nitride ...