1
Steven B Herschbein, Narender Rana, Chad Rue, Michael R Sievers: Ion detector for ion beam applications. International Business Machines Corporation, Lisa U Jaklitsch, October 10, 2006: US07119333 (19 worldwide citation)

Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron ...


2
Michael R Sievers, Steven B Herschbein, Aaron D Shore: Focused ion beam process for removal of copper. International Business Machines Corporation, Tiffany Townsend, Cantor Colburn, May 4, 2004: US06730237 (9 worldwide citation)

A process for milling copper metal from a substrate having an exposed copper surface includes absorbing a halogen gas onto the exposed copper surface to generate reaction products of copper and the halogen gas; removing unreacted halogen gas from the surface; and directing a focused ion beam onto th ...


3
Herschel M Marchman, Steven B Herschbein, Chad Rue, Michael Renner, Narender Rana: High-resolution optical channel for non-destructive navigation and processing of integrated circuits. International Business Machines Corporation, Todd M C Li, April 1, 2008: US07351966 (8 worldwide citation)

An optical-fiber based light channel system is included in an ion/electron beam tool for imaging and/or processing integrated circuits. The optical channel system includes an image collection portion, an optical fiber image transmission portion and a detector portion. The image collection portion in ...


4
Terence Kane, Lawrence S Fischer, Steven B Herschbein, Ying Hong, Michael P Tenney: Method for electrically characterizing charge sensitive semiconductor devices. International Business Machines Corporation, Todd M C Li, February 22, 2005: US06858530 (6 worldwide citation)

A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 μm, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FIB et ...


5
Terence Kane, Lawrence S Fischer, Steven B Herschbein, Ying Hong, Michael P Tenney: Structure and method for charge sensitive electrical devices. International Business Machines Corporation, Todd M C Li, McGinn & Gibb PLLC, December 30, 2003: US06670717 (5 worldwide citation)

A method and structure for the electrical characterization of a semiconductor device comprising, first, forming a hole having a diameter less than 0.15 &mgr;m, wherein the hole is created using focused ion beam (FIB) etching, and through at least a protective cap layer formed over the device. The FI ...


6
Lawrence Fischer, Steven B Herschbein: Semiconductor copper line cutting method. International Business Machines Corporation, Steven Capella, William P Skladony, January 17, 2006: US06987067 (4 worldwide citation)

A method of repairing a semiconductor chip containing copper is taught, whereby copper is selectively removed from the chip. The method involves processing the chip inside a chamber in which the chip is exposed to various gases and an energy source, such as a focused ion beam. To the extent the chip ...


7
Steven B Herschbein, Ville S Kiiskinen, Chad Rue, Carmelo F Scrudato, Michael R Sievers: Dry etch process to edit copper lines. International Business Machines Corporation, DeLio & Peterson, Kelly M Reynolds, Steven Capella, May 31, 2005: US06900137 (3 worldwide citation)

The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed throu ...


8
Lawrence S Fischer, Steven B Herschbein, Chad Rue: Sample mount for performing sputter-deposition in a focused ion beam (FIB) tool. International Business Machines Corporation, McGinn & Gibb PLLC, Jay H Anderson, September 20, 2005: US06946064 (2 worldwide citation)

A method and structure for a sample processing apparatus that uses a vacuum enclosure is disclosed. A focused ion beam tool, sputter target, movable stage, and hinged mount are all included within the vacuum enclosure. The hinged mount includes a sample mounting portion, for holding a sample being p ...


9
Michael R Sievers, Steven B Herschbein, Aaron D Shore: Focused ion beam process for removal of copper. International Business Machines Corporation, Philmore H Colburn II, Cantor Colburn, December 26, 2002: US20020195422-A1 (2 worldwide citation)

A process for milling copper metal from a substrate having an exposed copper surface includes absorbing a halogen gas onto the exposed copper surface to generate reaction products of copper and the halogen gas; removing unreacted halogen gas from the surface; and directing a focused ion beam onto th ...


10
Steven B Herschbein, Ronald C Geiger Jr, George Y Gu, Oleg Gluschenkov, Xu Ouyang: Inline low-damage automated failure analysis. International Business Machines Corporation, Ian D MacKinnon, Howard M Cohn, February 7, 2012: US08111903 (1 worldwide citation)

A system and method for failure analysis of devices on a semiconductor wafer is disclosed. The present invention comprises the use of an inline focused ion beam milling tool to perform milling and image capturing of cross sections of a desired inspection point. The inspection points are located by i ...



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