1
Robert W Humphreys, Adrian W Walker, Robin J Green, Stephen W Russell: Liquid bleaching compositions. Lever Brothers Company, Milton L Honig, James J Farrell, February 10, 1987: US04642198 (33 worldwide citation)

Aqueous liquid bleaching compositions comprising a solid, particulate, substantially water-insoluble organic peroxy acid, e.g. diperoxydodecanedioic acid, stably suspended in an acidic surfactant structured liquid comprising a surfactant, an electrolyte and water in the substantial absence of a thic ...


2
Robert H Havemann, Girish A Dixit, Stephen W Russell: Variable doping of metal plugs for enhanced reliability. Texas Instruments Incorporated, Jacqueline J Garner, W James Brady III, Frederick J Telecky Jr, October 10, 2000: US06130156 (31 worldwide citation)

A method of fabricating an interconnect wherein there is initially provided a first layer of electrically conductive interconnect (3). A via (7) is formed which is defined by walls extending to the first layer of interconnect. A layer of titanium (9) is formed between the electrically conductive int ...


3
Stephen W Russell: Storage-stable enzymatic liquid detergent composition. Lever Brothers Company Division of Conopco, Ronald A Koatz, June 23, 1992: US05124066 (18 worldwide citation)

An aqueous liquid detergent composition comprising water, a glyceryl ether of an alkoxylated nonionic surfactant, an enzyme and boric acid or a boron-equivalent thereof capable of reacting with said surfactant.


4
Stephen W Russell, Jiong Ping Lu: Copper bond pad process. Texas Instruments Incorporated, Jacqueline J Garner, W James Brady III, Frederick J Telecky Jr, April 17, 2001: US06218732 (18 worldwide citation)

An integrated circuit utilizing copper wiring has copper bond pads which are covered with a passivation layer to prevent unwanted reactions of the copper with metals which are bonded to it. The passivation layer can be an intermetallic of copper and titanium or a stacked layer of CuTix/TiN. Various ...


5
Stephen W Russell, Alan D Tomlinson: Liquid non-aqueous detergents comprising narrow-range ethoxylates. Lever Brothers Company Division of Conopco, Ronald A Koatz, April 7, 1992: US05102574 (13 worldwide citation)

A substantially non-aqueous liquid detergent product comprising a liquid surfactant phase and a solid phase dispersed therein, the liquid surfactant phase comprising an ethoxylated alcohol having an average of from 5 to 8 ethylene oxide (EO) groups per molecule, at least 60% having a number of ethyl ...


6
Patricia B Smith, David B Aldrich, Stephen W Russell: Hydrogen plasma photoresist strip and polymeric residue cleanup process for oxygen-sensitive materials. Texas Instruments Incorporated, Peter K McLarty, W James Brady III, Frederick J Telecky Jr, February 21, 2006: US07001848 (8 worldwide citation)

Another embodiment of the instant invention is a method of fabricating a conductive interconnect for providing an electrical connection between a first conductor and a second conductor for an electrical device formed in a semiconductor substrate, the method comprising the steps of: forming a dielect ...


7
David A Kewley, Brian Cleereman, Stephen W Russell, Rex Stone, Anthony C Krauth: Methods of forming memory cells; and methods of forming vertical structures. Micron Technology, Wells St John P S, June 16, 2015: US09059115 (4 worldwide citation)

Some embodiments include methods of forming memory. A series of photoresist features may be formed over a gate stack, and a placeholder may be formed at an end of said series. The placeholder may be spaced from the end of said series by a gap. A layer may be formed over and between the photoresist f ...


8
Patricia B Smith, Girish A Dixit, Eden Zielinski, Stephen W Russell: Hydrogen passivation of chemical-mechanically polished copper-containing layers. Texas Instruments Incorporated, Peter K McLarty, W James Brady III, Frederick J Telecky Jr, June 26, 2001: US06251771 (3 worldwide citation)

An embodiment of the instant invention is a method of forming an electronic device over a semiconductor substrate and having at least one level of metallic conductors, the method comprising the steps of: forming a dielectric layer over the semiconductor substrate, the dielectric layer having opening ...


9
Jong Won Lee, Gianpaolo Spadini, Stephen W Russell, Derchang Kau: Replacement materials processes for forming cross point memory. Micron Technology, Holland & Hart, April 5, 2016: US09306165 (2 worldwide citation)

Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further inc ...


10
David A Kewley, Brian Cleereman, Stephen W Russell, Rex Stone, Anthony C Krauth: Methods of forming memory; and methods of forming vertical structures. Micron Technology, Wells St John P S, December 17, 2013: US08609489 (2 worldwide citation)

Some embodiments include methods of forming memory. A series of photoresist features may be formed over a gate stack, and a placeholder may be formed at an end of said series. The placeholder may be spaced from the end of said series by a gap. A layer may be formed over and between the photoresist f ...