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Eb Eshun
Coolbaugh Douglas D, Cotte John M, Eshun Ebenezer E, Stein Kenneth J, Vaed Kunal: Damascene integration scheme for developing metal-insulator-metal capacitors. International Business Machines Corporation, September 1, 2007: TWI286384

The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pede ...


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Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Shepard Joseph F, Stein Kenneth J, Vaed Kunal: Semiconductor device and forming method thereof. Ibm, yu jing li zheng, June 8, 2005: CN200310116964

The present invention provides a high-performance metal-insulator-metal (MIM) capacitor which contains a high-k dielectric, yet no substantial shorting of the MIM capacitor is observed. Specifically, shorting of the MIM capacitor is substantially prevented in the present invention by forming a passi ...


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Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Stein Kenneth J, Vaed Kunal: Hi-k dielectric layer deposition method on substrate. Ibm, zhang gao, November 29, 2006: CN200610084458

Methods of forming a high dielectric constant dielectric layer are disclosed including providing a process chamber including a holder for supporting a substrate, introducing a first gas comprising a high dielectric constant (Hi-K) dielectric precursor and an oxygen (O2) oxidant into the process cham ...


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Lindgren Peter J, Sprogis Edmund J, Stamper Anthony K, Stein Kenneth J: Through substrate annular via including plug filler. International Business Machines Corporation, Lindgren Peter J, Sprogis Edmund J, Stamper Anthony K, Stein Kenneth J, KOTULAK Richard M, August 20, 2009: WO/2009/102741 (2 worldwide citation)

A through substrate (10) via includes an annular conductor layer at a periphery of a through substrate (10) aperture, and a plug layer (24) surrounded by the annular conductor layer. A method for fabricating the through substrate (10) via includes forming a blind aperture within a substrate (10) and ...


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Chinthakindi Anil K, Jeng Shwu Jen, Lofaro Michael F, Schnabel Christopher M, Stein Kenneth J: Method for forming mimcap (metal, insulator, metal capacitor) and resistor to same level. Internatl Business Mach Corp &Lt IBM&Gt, July 29, 2004: JP2004-214649 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a process which reduces the number of treatment processes, eliminates a problem about an integration of the process such as a via landing on a resistor and a capacitor, and improves a performance and a property to be used.SOLUTION: An insulating oxide layer is accumu ...


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Volant Richard P, John M Cotte, Petrarca Kevin S, Stein Kenneth J: Method for fabricating mim(metal/insulator/metal) structure using anode oxidation process. Internatl Business Mach Corp &Lt IBM&Gt, September 27, 2002: JP2002-280458 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a process for fabricating a metal/insulator/metal capacitor(MIM cap) structure in a semiconductor substrate efficiently at low cost.SOLUTION: A metal oxide layer 18 is formed on a deposited underlying metal layer 16 using an anode oxidation procedure, a second metal ...


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Volant Richard P, Bisson John C, Cote Donna R, Dalton Timothy J, Groves Robert A, Petrarca Kevin S, Stein Kenneth J, Subbanna Seshadri: Method of fabricating micro-electromechanical switches on cmos compatible substrates. International Business Machines Corporation, SCHNURMANN Daniel H, July 3, 2003: WO/2003/054938 (1 worldwide citation)

A method of fabricating micro-electromechanical switches (MEMS) using a process starting with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric (150). All, or portions, of the interconnects are recessed to a degree sufficient to provide a capacitive air gap when ...


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