1
Stefan K Lai: Phase change material memory device. Intel Corporation, Trop Pruner & Hu P C, January 28, 2003: US06512241 (402 worldwide citation)

A phase change memory with a very limited area of contact between the lower electrode and the phase change material may be formed by defining a closed geometric structure for the lower electrode. The lower electrode may then be covered. The covering may then be opened in a very narrow strip extendin ...


2
Stefan K Lai: Phase change material memory device. Intel Corporation, Trop Pruner & Hu P C, April 19, 2005: US06881603 (92 worldwide citation)

A phase change memory with a very limited area of contact between the lower electrode and the phase change material may be formed by defining a closed geometric structure for the lower electrode. The lower electrode may then be covered. The covering may then be opened in a very narrow strip extendin ...


3
Stefan K Lai, Daniel N Tang, Simon Y Wang, Susan L Kao, Baylor B Triplett: Method of reducing hot-electron degradation in semiconductor devices. Intel Corporation, Blakely Sokoloff Taylor & Zafman, July 20, 1993: US05229311 (29 worldwide citation)

A method of reducing the degradation effects associated with avalanche injection or tunnelling of hot-electrons in a field-effect semiconductor device is disclosed. The method of the present invention includes covering the active regions of the semiconductor device with a protective titanium barrier ...


4
Stefan K Lai: Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide. Intel Corporation, April 21, 1992: US05106772 (17 worldwide citation)

A method for fabricating floating gate memory arrays with improved electrical erase characteristics and a reduced gate oxide defect density is described. According to the invented method, a protective polysilicon layer is deposited immediately following growth of the tunnel or gate oxide. The polysi ...


5
Stefan K Lai: Phase change material memory device. Trop Pruner & Hu PC, July 3, 2003: US20030122166-A1

A phase change memory with a very limited area of contact between the lower electrode and the phase change material may be formed by defining a closed geometric structure for the lower electrode. The lower electrode may then be covered. The covering may then be opened in a very narrow strip extendin ...


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