1
Stanford R Ovshinsky, Stephen J Hudgens, Wolodymyr Czubatyj, David A Strand, Guy C Wicker: Electrically erasable phase change memory. Energy Conversion Devices, Lawrence G Norris, November 24, 1992: US05166758 (576 worldwide citation)

An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below tho ...


2
Stanford R Ovshinsky: Multibit single cell memory element having tapered contact. Energy Conversion Devices, David W Schumaker, Marvin S Siskind, Marc J Luddy, November 11, 1997: US05687112 (506 worldwide citation)

An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak ...


3
Patrick J Klersy, David C Jablonski, Stanford R Ovshinsky: Thin-film structure for chalcogenide electrical switching devices and process therefor. Energy Conversion Devices, Marvin S Siskind, January 5, 1993: US05177567 (493 worldwide citation)

Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material ...


4
Stanford R Ovshinsky, Robert R Johnson, Vincent D Cannella, Zvi Yaniv: Programmable semiconductor structures and methods for using the same. Energy Conversion Devices, Lawrence G Norris, Robert S Nolan, Richard O Gray Jr, February 24, 1987: US04646266 (440 worldwide citation)

A solid state semiconductor device is disclosed which is programmable so as to alter the impedance between its two terminals. In many embodiments, the device is programmable to have any one of four conditions: a first in which the electrical impedance is relatively high in both directions; a second ...


5
Stanford R Ovshinsky, David A Strand, Patrick Klersy: Electrically erasable memory elements characterized by reduced current and improved thermal stability. Energy Conversion Devices, David W Schumaker, Marvin S Siskind, Marc J Luddy, July 9, 1996: US05534712 (428 worldwide citation)

Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a ...


6
Stanford R Ovshinsky, Wolodymyr Czubatyj, Quiyi Ye, David A Strand, Stephen J Hudgens: Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom. Energy Conversion Devices, March 22, 1994: US05296716 (396 worldwide citation)

A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique ...


7
Patrick Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey Kostylev, Stanford R Ovshinsky: Memory element with energy control mechanism. Energy Conversion Devices, Philip H Schlazer, David W Schumaker, Marvin S Siskind, August 3, 1999: US05933365 (364 worldwide citation)

An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be se ...


8
Wolodymyr Czubatyj, Stanford R Ovshinsky, David A Strand, Patrick Klersy, Sergey Kostylev, Boil Pashmakov: Composite memory material comprising a mixture of phase-change memory material and dielectric material. Energy Conversion Devices, Marvin S Siskind, David W Schumaker, October 20, 1998: US05825046 (350 worldwide citation)

A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single ...


9
Stanford R Ovshinsky, Boil Pashmakov: Universal memory element and method of programming same. Energy Conversion Devices, Philip H Schlazer, Marvin S Siskind, David W Schumaker, June 15, 1999: US05912839 (314 worldwide citation)

Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, ...


10
Stanford R Ovshinsky, Stephen J Hudgens, David A Strand, Wolodymyr Czubatyj, Jesus Gonzalez Hernandez, Hellmut Fritzsche, Qiuyi Ye, Sergey A Kostylev, Benjamin S Chao: Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements. Marvin S Siskind, August 2, 1994: US05335219 (311 worldwide citation)

A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has be ...