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Phan Khoi A, Rangarajan Bharath, Singh Bhanwar, Subramanian Ramkumar: Refractive index system monitor and control for immersion lithography. Advanced Micro Devices, Phan Khoi A, Rangarajan Bharath, Singh Bhanwar, Subramanian Ramkumar, COLLOPY Daniel R, March 3, 2005: WO/2005/019935 (375 worldwide citation)

A system and/or method are disclosed for measuring (250) and/or controlling (260) refractive index (n) and/or lithographic constant (k) of an immersion medium (210) utilized in connection with immersion lithography. A known grating structure (602) is built upon a substrate (220). A refractive index ...


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Subramanian Ramkumar, Singh Bhanwar, Phan Khoi A: Use of supercritical fluid to dry wafer and clean lens in immersion lithography. Advanced Micro Devices, Spansion, Subramanian Ramkumar, Singh Bhanwar, Phan Khoi A, DRAKE Paul S, January 11, 2007: WO/2007/005362 (13 worldwide citation)

Disclosed are immersion lithography methods and systems involving irradiating a photoresist through a lens and an immersion liquid of an immersion lithography tool, the immersion liquid in an immersion space contacting the lens and the photoresist; removing the immersion liquid from the immersion sp ...


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Ong Edith, Singh Bhanwar: Improved photolithography process using two photoresist layers for device fabrication.. Advanced Micro Devices, June 1, 1988: EP0269219-A2 (4 worldwide citation)

An improved two layer photolithographic process is disclosed for use in the construction of an integrated circuit structure. The improvements comprise applying over a first photoresist layer sensitive to light below about 250 nm a second photoresist layer containing a selective solvent which is not ...


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Halliyal Arvind, Phan Khoi A, Singh Bhanwar: In-situ thickness measurement for use in semiconductor processing. Advanced Micro Devices, June 21, 2003: TW538491 (1 worldwide citation)

A system and method are disclosed for providing in-situ monitoring of thin film thickness (102, 122, 158), such as by employing a non-destructive optical measurement technique. The monitored film thickness (102, 122, 158) may be employed to help achieve a desired feature film thickness (102, 122, 15 ...


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Tabery Cyrus E, Phan Khoi A, Rangarajan Bharath, Singh Bhanwar, Subramanian Ramkumar: In-situ or ex-situ profile monitoring of phase openings on alternating phase shifting masks by scatterometry. Advanced Micro Devices, November 1, 2003: TW559887 (1 worldwide citation)

A system for monitoring and controlling aperture etching in an alternating aperture phase shift mask (170, 270, 370, 722) is provided. The system includes one or more light sources (744, 762, 844), each light source (744, 762, 844) directing light to one or more apertures (150, 160, 250, 260, 350, 3 ...


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Phan Khoi A, Singh Bhanwar, Rangarajan Bharath, Subramanian Ramkumar: Comprehensive integrated lithographic process control system based on product design and yield feedback system. Advanced Micro Devices, April 24, 2002: GB2410834-A

The present invention provides systems and methods that facilitate performing fabrication process. Critical parameters are valued collectively as a quality matrix, which weights respective parameters according to their importance to one or more design goals. The critical parameters are weighted by c ...


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Matthew Itty, Singh Bhanwar: Improved process margin using discrete assist features. Advanced Micro Devices, May 28, 2008: GB2444214-A

The subject invention provides a system and method for improving the process margin of a lithographic imaging system. The process margin improvement is achieved through the novel placement of discrete assist features and/or the use of forbidden pitches and specific pitch orientations (1310, 1312). N ...


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Phan Khoi A, Rangarajan Bharath, Singh Bhanwar: Multi-layer overlay measurement and correction technique for ic manufacturing. Advanced Micro Devices, December 20, 2006: GB2427268-A

A system facilitating measurement and correction of overlay between multiple layers of a wafer (402) is disclosed. The system comprises an overlay target (406) that represents overlay between three or more layers of a wafer (402) and a measurement component (408) that determines overlay error existe ...


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Subramanian Ramkumar, Singh Bhanwar, Phan Khoi A: Use of supercritical fluid to dry wafer and clean lens in immersion lithography. Advanced Micro Devices, Spansion, April 2, 2008: GB2442402-A

Disclosed are immersion lithography methods and systems involving irradiating a photoresist through a lens and an immersion liquid of an immersion lithography tool, the immersion liquid in an immersion space contacting the lens and the photoresist; removing the immersion liquid from the immersion sp ...