1
Shunpei Yamazaki, Yasuyuki Arai, Satoshi Teramoto: Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding. Semiconductor Energy Laboratory, Fish & Richardson P C, October 13, 1998: US05821138 (490 worldwide citation)

A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the cr ...


2
Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga: Semiconductor device having an SOI structure and manufacturing method therefor. Semiconductor Energy Laboratory, Fish & Richardson P C, October 3, 2000: US06127702 (406 worldwide citation)

A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 are effective in ...


3
Shunpei Yamazaki, Hisashi Ohtani, Toshiji Hamatani: Semiconductor device and manufacturing method therefor. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, August 14, 2001: US06274887 (381 worldwide citation)

An active layer of an NTFT includes a channel forming region, at least a first impurity region, at least a second impurity region and at least a third impurity region therein. Concentrations of an impurity in each of the first, second and third impurity regions increase as distances from the channel ...


4
Shunpei Yamazaki, Yasuhiko Takemura, Setsuo Nakajima, Yasuyuki Arai: Display device and method of fabricating involving peeling circuits from one substrate and mounting on other. Semiconductor Energy Laboratory, Fish & Richardson P C, May 26, 1998: US05757456 (338 worldwide citation)

A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of t ...


5
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Bradley D Blanche, Sixbey Friedman Leedom & Ferguson, March 4, 1997: US05608232 (302 worldwide citation)

Method or fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


6
Shunpei Yamazaki, Setsuo Nakajima, Yasuyuki Arai: Method for producing display device. Semiconductor Energy Laboratory, Fish & Richardson P C, November 10, 1998: US05834327 (301 worldwide citation)

In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first ...


7
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, June 17, 1997: US05639698 (282 worldwide citation)

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


8
Shunpei Yamazaki: Electro-optical device constructed with thin film transistors. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, September 26, 1995: US05453858 (277 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


9
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang: Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode. Semiconductor Energy Laboratory, Sixbey Friedman Leedom & Ferguson, May 3, 1994: US05308998 (270 worldwide citation)

An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide ...


10
Shunpei Yamazaki: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, April 30, 2002: US06380046 (265 worldwide citation)

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crysta ...



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