1
Shiomi Hiromu, Kimoto Tsunenobu, Matsunami Hiroyuki: Sic wafer, sic semiconductor device and production method of sic wafer. Sixon, Kansai Electric Power C C, Mitsubishi, Sumitomo Electric Industries, June 19, 2002: EP1215730-A1 (27 worldwide citation)

A SiC wafer comprises a 4H polytype SiC substrate 2 in which the crystal plane orientation is substantially ä03-38ü, and a buffer layer 4 composed of SiC formed over this SiC substrate 2. The ä03-38ü plane forms an angle of approximately 35 DEG with respect to the axial direction in which micropipes ...


2
Fujimori Naoji C O Itami Works, Nishibayashi Yoshiki C O Itami, Shiomi Hiromu C O Itami Works: Diamond light-emitting device.. Sumitomo Electric Industries, October 3, 1990: EP0390209-A2 (23 worldwide citation)

A light-emitting device comprising a substrate of single-crystal diamond, a boron-doped epitaxial layer that is grown on the principal surface of the substrate by a vapor-phase synthesis technique, and a positive and a negative electrode which are formed on the epitaxial layer, the negative electrod ...


3
Shiomi Hiromu C O Itami Works, Nishibayashi Yoshiki C O Itami, Fujimori Naoji C O Itami Works: Diamond semiconductor devices.. Sumitomo Electric Industries, September 11, 1991: EP0445998-A1 (19 worldwide citation)

In the present device a non-doped or low-doped diamond layer (3) with high resistivity is epitaxially grown between the n-type diamond layer (6) and the p-type diamond layer (2) in the pn junction diode or between the metal layer and the doped diamond layer in the Schottky diode.


4
Shiomi Hiromu C O Itami Works, Nishibayashi Yoshiki C O Itami, Fujimori Naoji C O Itami Works: Diamond semiconductor device.. Sumitomo Electric Industries, November 21, 1991: EP0457508-A2 (18 worldwide citation)

A semiconductor device having active parts made from semiconductor diamond. The active parts comprise a high doped diamond layer (2) for supplying free carriers and a non-or low doped diamond layer (3) for giving the free carriers conductive region. The free carriers are transferred from the high do ...


5
Shiomi Hiromu, Kimoto Tsunenobu, Matsunami Hiroyuki: Sic single crystal and method for growing the same. Sixon, Kansai Electric Power C C, Mitsubishi, Sumitomo Electric Industries, September 25, 2002: EP1243674-A1 (15 worldwide citation)

A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a ä03-38ü plane 30u or a plane which is inclined at off angle alpha , within about 10 DEG , with respect to th ...


6
Shiomi Hiromu, Tatsumi Masami, Nishino Shigehiro: Method of making gan single crystal and apparatus for making gan single crystal. Sumitomo Electric Industries, Nishino Shigehiro, August 25, 1999: EP0937790-A2 (14 worldwide citation)

An apparatus comprises a Ga-disposing section in which Ga is disposed; a seed-crystal-disposing section in which a seed crystal of GaN is disposed; a synthesis vessel adapted to accommodate the Ga-disposing section, the seed-crystal-disposing section, and a gas containing nitrogen; heating means ada ...


7
Nishibayashi Yoshiki Itami Wor, Shiomi Hiromu Itami Works Of, Fujimori Naoji Itami Works Of: Method for fabricating a schottky junction.. Sumitomo Electric Industries, November 27, 1991: EP0458530-A2 (14 worldwide citation)

A Schottky junction between diamond (2) and metal (3) is not so good that the diode using the Schottky junction has a big leakage reverse current and n-value is far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. Pret ...


8
Kimoto Tsunenobu, Shiomi Hiromu, Saitoh Hiroaki: Method of growing sic single crystal and sic single crystal grown by same. Toyota Jidosha Kabushiki Kaisha, Sixon, Kimoto Tsunenobu, Shiomi Hiromu, Saitoh Hiroaki, sAOKI Atsushi, November 24, 2005: WO/2005/111277 (10 worldwide citation)

A method of epitaxial growth of a 4H-SiC single crystal enabling growth of an SiC single crystal with low defects and low impurities able to be used for a semiconductor material at a practical growth rate, comprising growing a 4H-SiC single crystal on a 4H-SiC single crystal substrate by epitaxial g ...


9
Shiomi Hiromu: Apparatuses for deposition or etching. Sumitomo Electric Industries, February 19, 1997: EP0758688-A1 (9 worldwide citation)

The apparatus according to the present invention is capable of maintain a plasma at relatively high pressure while preventing a window from being heated or sputtered by the plasma. The reaction chamber includes (1) an entrance window for guiding an electromagnetic wave such as a microwave or an RF t ...


10