1
Hajime Akimoto, Shinya Ohba, Toshifumi Ozaki: Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity. Hitachi, Antonelli Terry Stout & Kraus, July 17, 1990: US04942474 (85 worldwide citation)

A solid-state imaging device including a plurality of photoelectric conversion elements (for example, photodiodes) arranged on a semiconductor substrate so as to form a matrix and read-out means for reading out signal charges which are stored in the photodiodes in accordance with incident light, in ...


2
Tamura Masao, Hirotsugu Kozuka, Yasuo Wada, Makoto Ohkura, Tamura Hiroshi, Takashi Tokuyama, Takahiro Okabe, Osamu Minato, Shinya Ohba: Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers. Hitachi, Antonelli Terry & Wands, September 2, 1986: US04609407 (53 worldwide citation)

Herein disclosed is a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-crystalline semiconductor substrate and an insulating film formed on the surface of the substrate.


3
Hajime Akimoto, Toshifumi Ozaki, Shinya Ohba: Solid-state imaging device having an amplifying means in the matrix arrangement of picture elements. Hitachi, Antonelli Terry & Wands, February 28, 1989: US04809075 (53 worldwide citation)

A solid-state imaging device is constructed by integrating a plurality of face plate elements of an imager in the shape of a matrix on a semiconductor substrate. The face plate elements are formed of photodiodes, in which charges corresponding to incident light are accumulated. The charges are conve ...


4
Hajime Akimoto, Shinya Ohba, Mitsuyuki Mitsui: Solid-state image array with simultaneously activated line drivers. Hitachi, Antonelli Terry Stout & Kraus, September 1, 1992: US05144447 (44 worldwide citation)

The present invention relates to an improved solid-state imaging device having pixel amplifiers. The higher definition of the device results in the increase in number of pixels as large as not less than two million. When a solid-state imaging device having such a large number of pixels is provided w ...


5
Toru Baji, Toshihisa Tsukada, Norio Koike, Toshiyuki Akiyama, Iwao Takemoto, Shigeru Shimada, Chushirou Kusano, Shinya Ohba, Haruo Matsumaru: Solid state image pickup device. Hitachi, Antonelli Terry & Wands, September 27, 1983: US04407010 (44 worldwide citation)

A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counter ...


6
Hajime Akimoto, Shinya Ohba: Solid-state imaging device including photoelectric conversion elements integrated at a surface of a semiconductor substrate. Hitachi, Antonelli Terry Stout & Kraus, September 4, 1990: US04954895 (37 worldwide citation)

A solid-state imaging device has a plurality of photodiodes (photoelectric conversion elements) formed in a surface of a semiconductor substrate in a matrix configuration and reading means for reading out signal charges stored in the photodiodes in accordance with the incident lights in a predetermi ...


7
Iwao Takemoto, Norio Koike, Shinya Ohba, Haruhisa Ando, Masaaki Nakai, Syoji Hanamura, Ryuichi Izawa, Masaharu Kubo, Masakazu Aoki, Shuhei Tanaka: Circuit for generating scanning pulses. Hitachi, Hitachi Denshi Kabushiki Kaisha, Craig and Antonelli, October 13, 1981: US04295055 (31 worldwide citation)

A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and dra ...


8
Shinya Ohba, Iwao Takemoto, Masaharu Kubo: Bulk charge transfer semiconductor device. Hitachi, Craig & Antonelli, June 28, 1977: US04032952 (31 worldwide citation)

In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating lay ...


9
Shinya Ohba, Shuhei Tanaka, Masaharu Kubo, Haruhisa Ando, Yataro Yamashita, Shoji Hanamura, Masakazu Aoki, Masaaki Nakai: Solid-state imaging device. Hitachi, Craig & Antonelli, June 16, 1981: US04274113 (28 worldwide citation)

A solid-state imaging device which is horizontally scanned by a discontinuous scanning pulse train, wherein an output signal of the device is integrated by a signal processing circuit which comprises an emitter follower (source follower) circuit and a capacitor disposed in parallel with the emitter ...


10
Shinya Ohba, Kyotake Uchiumi: Solid-state imaging device. Hitachi, Craig & Antonelli, May 15, 1979: US04155094 (27 worldwide citation)

In a semiconductor photoelectric device comprising a plurality of photodiodes, MOS transistor switches and signal output means which are provided on a semiconductor substrate, a solid-state imaging device characterized in that said each photodiode is constructed of a PN-junction diode and an MIS or ...