1
James S Sims, Jon Henri, Kathryn M Kelchner, Sathish Babu S V Janjam, Shane Tang: Plasma enhanced atomic layer deposition with pulsed plasma exposure. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, July 7, 2015: US09076646 (34 worldwide citation)

The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achi ...


2
Jon Henri, Dennis M Hausmann, Bart J van Schravendijk, Shane Tang, Karl F Leeser: Selective inhibition in atomic layer deposition of silicon-containing films. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, February 7, 2017: US09564312 (19 worldwide citation)

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of th ...


3
Michal Danek, Jon Henri, Shane Tang: Deposition of conformal films by atomic layer deposition and atomic layer etch. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, November 22, 2016: US09502238 (17 worldwide citation)

Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a ...


4
Jon Henri, Dennis M Hausmann, Bart J van Schravendijk, Shane Tang, Karl F Leeser: Selective inhibition in atomic layer deposition of silicon-containing films. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, January 23, 2018: US09875891 (8 worldwide citation)

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of th ...


5
Jon Henri, Dennis M Hausmann, Shane Tang, James S Sims: Method of depositing ammonia free and chlorine free conformal silicon nitride film. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, March 7, 2017: US09589790 (8 worldwide citation)

Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N—H-bond-free, and carbon-free silicon-containing precursor such as disilane, purging of the precursor, exposure to a nitrogen plasma, and purging of the plasma at l ...