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Seungjune Jeon: Systems and methods of decoding data using soft bits at a non-binary decoder that uses probabilistic decoding. Sandisk Technologies, Toler Law Group PC, February 4, 2014: US08644067 (13 worldwide citation)

A method includes reading a representation of a codeword stored in a multi-level-cell (MLC) memory by comparing cell threshold voltages in the MLC memory to hard bit thresholds to generate hard bit values and to soft bit thresholds to generate soft bit values. The hard bit values and the soft bit va ...


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Ying Yu Tai, Seungjune Jeon, Jinagli Zhu, Yeuh Yale Ma: Method and system of reading threshold voltage equalization. SANDISK TECHNOLOGIES, Morgan Lewis & Bockius, September 27, 2016: US09454420 (6 worldwide citation)

The various implementations described herein include systems, methods and/or devices that may enhance the reliability with which data can be stored in and read from a memory. The method includes, in response to one or more host read commands, reading data from a set of memory cells in a flash memory ...


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Seungjune Jeon, Steven Cheng: Systems and methods of generating a replacement default read threshold. SanDisk Technologies, Toler Law Group PC, March 25, 2014: US08683297 (6 worldwide citation)

A method includes generating a replacement default read threshold at least partially based on a default read threshold and on an updated read threshold. The method also includes sending the replacement default read threshold to the memory.


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Seungjune Jeon, Xiaoheng Chen: Detection and handling of unbalanced errors in interleaved codewords. SANDISK ENTERPRISE IP, Morgan Lewis & Bockius, July 28, 2015: US09092350 (5 worldwide citation)

Mechanisms are provided for detecting whether at least one of two or more portions of memory (e.g. chips, blocks, sectors, planes, pages, word lines, etc.) are more error-prone than the others, when portions of codewords are interleaved across the two or more portions of memory. Some implementations ...


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Seungjune Jeon, Idan Alrod, Qing Li, Xiaoyu Yang: Detecting effect of corrupting event on preloaded data in non-volatile memory. SANDISK TECHNOLOGIES, Toler Law Group PC, May 19, 2015: US09037946 (5 worldwide citation)

A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of storage elements using the read threshold voltage. ...


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Seungjune Jeon: Optimal multilevel sensing for reading data from a storage medium. SANDISK TECHNOLOGIES, Morgan Lewis & Bockius, January 16, 2018: US09870830 (4 worldwide citation)

Systems, methods and/or devices that enhance the reliability with which data can be stored in and read from a memory utilize an error indicator, obtained from using one reading threshold voltage for decoding, to adaptively determine the reading threshold voltage(s) used for subsequent decoding attem ...


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Seungjune Jeon, Idan Alrod, Qing Li, Xiaoyu Yang: Detecting effect of corrupting event on preloaded data in non-volatile memory. Sandisk Technologies, Toler Law Group PC, May 26, 2015: US09043678 (2 worldwide citation)

A method includes determining a read threshold voltage corresponding to a group of storage elements in a non-volatile memory that includes a three-dimensional (3D) memory of a data storage device. The method also includes determining an error metric corresponding to data read from the group of stora ...


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Seungjune Jeon, Charles Kwong, Jiangli Zhu: Device and method for resolving an LM flag issue. SANDISK ENTERPRISE IP, Morgan Lewis & Bockius, October 13, 2015: US09159437 (1 worldwide citation)

The reliability with which data can be read from a storage medium, such as flash memory storage medium, is enhanced by updating an upper limit of a reading threshold voltage window for a respective portion of the storage medium. For each memory cell in the respective portion of the storage medium, a ...


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Seungjune Jeon, Idan Alrod, Eran Sharon, Dana Lee: Word line defect detection and handling for a data storage device. SANDISK TECHNOLOGIES, Toler Law Group PC, October 13, 2015: US09158613 (1 worldwide citation)

A data storage device includes a non-volatile memory that includes a three-dimensional (3D) memory and circuitry associated with operation of memory cells of the 3D memory. The non-volatile memory includes a word line coupled to a plurality of storage elements. A method includes detecting a conditio ...