1
Jie Liu, Xikun Wang, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Tungsten oxide processing. Applied Materials, Kilpatrick Townsend & Stockton, February 10, 2015: US08951429 (87 worldwide citation)

Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH3). Plasma effluents fr ...


2
Zhijun Chen, Jingchun Zhang, Ching Mei Hsu, Seung Park, Anchuan Wang, Nitin K Ingle: Radical-component oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023734 (84 worldwide citation)

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a ...


3
Jie Liu, Jingchun Zhang, Anchuan Wang, Nitin K Ingle, Seung Park, Zhijun Chen, Ching Mei Hsu: Selective titanium nitride etching. Applied Materials, Kilpatrick Townsend & Stockton, December 30, 2014: US08921234 (83 worldwide citation)

Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into ...


4
Zhijun Chen, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Non-local plasma oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, August 18, 2015: US09111877 (83 worldwide citation)

A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitro ...


5
Seung Park, Xikun Wang, Jie Liu, Anchuan Wang, Sang jin Kim: Gas-phase tungsten etch. Applied Materials, Kilpatrick Townsend & Stockton, March 29, 2016: US09299575 (59 worldwide citation)

Methods of evenly etching tungsten liners from high aspect ratio trenches are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a high flow of helium. Plasma effluents from the remote plasma are flowed into a substrate processi ...


6
Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Selective titanium nitride etch. Applied Materials, Kilpatrick Townsend & Stockton, March 1, 2016: US09275834 (55 worldwide citation)

A method of removing titanium nitride is described. The silicon nitride resides on a patterned substrate. The titanium nitride is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor, a nitrogen-and-hydrogen-containing precursor and an o ...


7
Joo Seung Park: Device and method for automatically transmitting documents in a facsimile system. Samsung Electronics, Robert E Bushnell Esq, September 2, 1997: US05663808 (54 worldwide citation)

A device for automatically transmitting a document in a facsimile system includes a central processing unit (CPU) that enables automatic transmission of image data from a document by dialing a telephone number recorded on the document in response to entry of a transmission start key. A key input uni ...


8
Seung Park, Anchuan Wang: and other materials, Silicon etch process with tunable selectivity to SiO. Applied Materials, Kilpatrick Townsend & Stockton, June 14, 2016: US09368364 (50 worldwide citation)

A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the ...


9
Zhijun Chen, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Non-local plasma oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, May 31, 2016: US09355863 (39 worldwide citation)

A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents may combine with a nitro ...


10
Jie Liu, Jingchun Zhang, Anchuan Wang, Nitin K Ingle, Seung Park, Zhijun Chen, Ching Mei Hsu: Selective titanium nitride etching. Applied Materials, Kilpatrick Townsend & Stockton, September 20, 2016: US09449845 (38 worldwide citation)

Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into ...