1
Seung hwan Lee, Yeong kwan Kim, Dong chan Kim, Young wook Park: Methods of forming thin films by atomic layer deposition. Samsung Electronics, Myers Bigel Sibley & Sajovec, October 22, 2002: US06468924 (296 worldwide citation)

Methods of forming thin films include forming a first layer comprising a first element that is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen. A step is then performed to expose the first l ...


2
Yeong Kwan Kim, Young Wook Park, Seung Hwan Lee: Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane. Samsung Electronics, Marger Johnson & McCollom P C, May 21, 2002: US06391803 (255 worldwide citation)

An atomic layer deposition method of forming a solid thin film layer containing silicon. A substrate is loaded into a chamber. A first portion of a first reactant is chemisorbed onto the substrate, and a second portion of the first reactant is physisorbed onto the substrate. The physisorbed portion ...


3
Hee sook Park, Gil heyun Choi, Seung hwan Lee, Yun jung Lee: Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same. Samsung Electronics, F Chau & Associates, May 17, 2005: US06893915 (68 worldwide citation)

A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an alu ...


4
Yeong Kwan Kim, Young Wook Park, Seung Hwan Lee: Method of forming a thin film using atomic layer deposition. Samsung Electronics, Marger Johnson & McCollom P C, December 7, 2004: US06828218 (60 worldwide citation)

The present invention provides a method of forming a thin film using atomic layer deposition (ALD). An ALD reactor having a single reaction space is provided. A batch of substrates is concurrently loaded into the single reaction space of the ALD reactor.


5
Dong Suk Shin, Hwa Sung Rhee, Tetsuji Ueno, Ho Lee, Seung Hwan Lee: Methods of fabricating a semiconductor device using a selective epitaxial growth technique. Samsung Electronics, Mills & Onello, April 22, 2008: US07361563 (58 worldwide citation)

Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are injected into the reaction chambe ...


6
Seung Hwan Lee: Fast forward/reverse travel controlling method for video on demand system. LG Electronics, June 23, 1998: US05771335 (42 worldwide citation)

A fast forward/reverse travelling controlling method in a VOD system using a MPEG 1 which can perform a fast forward/reverse travelling control in real-time processing with respect to video data of a moving picture by preparing a simple I table (I.sub.-- TABLE) and can control the fast forward/rever ...


7
Chang Heum Byun, Jong Gun Bae, Sung Ill Kang, Seung Hwan Lee: Sliding/hinge apparatus for sliding/rotating type mobile terminals. Samsung Electronics, Roylance Abrams Berdo & Goodman L, May 5, 2009: US07529571 (28 worldwide citation)

Disclosed herein is a sliding/hinge apparatus for sliding/rotating type mobile terminals, which can be slid and rotated from a body housing of the sliding/rotating type mobile terminal. The sliding/rotating type mobile terminal includes a body housing and a slide housing slidably mounted on the body ...


8
Hwa Sung Rhee, Hyun Suk Kim, Ueno Tetsuji, Jae Yoon Yoo, Seung Hwan Lee, Ho Lee, Moon han Park: At least penta-sided-channel type of FinFET transistor. Samsung Electronics, Harness Dickey & Pierce, June 10, 2008: US07385247 (23 worldwide citation)

An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, havi ...


9
Seung Hwan Lee, Jong Ho Yang: Method of forming a thin film with a low hydrogen content on a semiconductor device. Samsung Electronics, F Chau & Associates, August 23, 2005: US06933245 (23 worldwide citation)

A method of forming a thin film with a low hydrogen contents is provided by positioning a substrate inside a processing chamber, and supplying reacting materials into the chamber, chemisorbing a portion of the reacting materials onto the substrate. Then, a nitrogen (N2) remote plasma treatment is pe ...


10
Han Mei Choi, Kyoung Ryul Yoon, Seung Hwan Lee, Ki Yeon Park, Young Sun Kim: Gate structures of a non-volatile memory device and methods of manufacturing the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, January 12, 2010: US07646056 (21 worldwide citation)

In a gate structure of a non-volatile memory device is formed, a tunnel insulating layer and a charge trapping layer are formed on a substrate. A composite dielectric layer is formed on the charge trapping layer and has a laminate structure in which first material layers including aluminum oxide and ...



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