1
Seung hwan Lee, Yeong kwan Kim, Dong chan Kim, Young wook Park: Methods of forming thin films by atomic layer deposition. Samsung Electronics, Myers Bigel Sibley & Sajovec, October 22, 2002: US06468924 (282 worldwide citation)

Methods of forming thin films include forming a first layer comprising a first element that is chemisorbed to a surface of a substrate, by exposing the surface to a first source gas having molecules therein that comprise the first element and a halogen. A step is then performed to expose the first l ...


2
Yeong Kwan Kim, Young Wook Park, Seung Hwan Lee: Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane. Samsung Electronics, Marger Johnson & McCollom P C, May 21, 2002: US06391803 (238 worldwide citation)

An atomic layer deposition method of forming a solid thin film layer containing silicon. A substrate is loaded into a chamber. A first portion of a first reactant is chemisorbed onto the substrate, and a second portion of the first reactant is physisorbed onto the substrate. The physisorbed portion ...


3
Hee sook Park, Gil heyun Choi, Seung hwan Lee, Yun jung Lee: Semiconductor device having barrier layer between ruthenium layer and metal layer and method for manufacturing the same. Samsung Electronics, F Chau & Associates, May 17, 2005: US06893915 (67 worldwide citation)

A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an alu ...


4
Dong Suk Shin, Hwa Sung Rhee, Tetsuji Ueno, Ho Lee, Seung Hwan Lee: Methods of fabricating a semiconductor device using a selective epitaxial growth technique. Samsung Electronics, Mills & Onello, April 22, 2008: US07361563 (56 worldwide citation)

Methods of fabricating a semiconductor device using a selective epitaxial growth technique include forming a recess in a semiconductor substrate. The substrate having the recess is loaded into a reaction chamber. A semiconductor source gas and a main etching gas are injected into the reaction chambe ...


5
Yeong Kwan Kim, Young Wook Park, Seung Hwan Lee: Method of forming a thin film using atomic layer deposition. Samsung Electronics, Marger Johnson & McCollom P C, December 7, 2004: US06828218 (55 worldwide citation)

The present invention provides a method of forming a thin film using atomic layer deposition (ALD). An ALD reactor having a single reaction space is provided. A batch of substrates is concurrently loaded into the single reaction space of the ALD reactor.


6
Seung Hwan Lee: Fast forward/reverse travel controlling method for video on demand system. LG Electronics, June 23, 1998: US05771335 (41 worldwide citation)

A fast forward/reverse travelling controlling method in a VOD system using a MPEG 1 which can perform a fast forward/reverse travelling control in real-time processing with respect to video data of a moving picture by preparing a simple I table (I.sub.-- TABLE) and can control the fast forward/rever ...


7
Chang Heum Byun, Jong Gun Bae, Sung Ill Kang, Seung Hwan Lee: Sliding/hinge apparatus for sliding/rotating type mobile terminals. Samsung Electronics, Roylance Abrams Berdo & Goodman L, May 5, 2009: US07529571 (28 worldwide citation)

Disclosed herein is a sliding/hinge apparatus for sliding/rotating type mobile terminals, which can be slid and rotated from a body housing of the sliding/rotating type mobile terminal. The sliding/rotating type mobile terminal includes a body housing and a slide housing slidably mounted on the body ...


8
Han Mei Choi, Kyoung Ryul Yoon, Seung Hwan Lee, Ki Yeon Park, Young Sun Kim: Gate structures of a non-volatile memory device and methods of manufacturing the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, January 12, 2010: US07646056 (21 worldwide citation)

In a gate structure of a non-volatile memory device is formed, a tunnel insulating layer and a charge trapping layer are formed on a substrate. A composite dielectric layer is formed on the charge trapping layer and has a laminate structure in which first material layers including aluminum oxide and ...


9
Seung Hwan Lee, Sang Hyeop Lee, Young Sun Kim, Se Jin Shim, You Chan Jin, Ju Tae Moon, Jin Seok Choi, Young Min Kim, Kyung Hoon Kim, Kab Jin Nam, Young Wook Park, Seok Jun Won, Young Dae Kim: Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed thereby. Samsung Electronics, Myers Bigel Sibley & Sajovec, April 17, 2001: US06218260 (20 worldwide citation)

Methods of forming integrated circuit capacitors include the steps of forming a lower electrode of a capacitor by forming a conductive layer pattern (e.g., silicon layer) on a semiconductor substrate and then forming a hemispherical grain (HSG) silicon surface layer of first conductivity type on the ...


10
Hwa Sung Rhee, Hyun Suk Kim, Ueno Tetsuji, Jae Yoon Yoo, Seung Hwan Lee, Ho Lee, Moon han Park: At least penta-sided-channel type of FinFET transistor. Samsung Electronics, Harness Dickey & Pierce, June 10, 2008: US07385247 (20 worldwide citation)

An at least penta-sided-channel type of FinFET transistor may include: a base; a semiconductor body formed on the base, the body being arranged in a long dimension to have source/drain regions sandwiching a channel region, at least the channel, in cross-section transverse to the long dimension, havi ...



Click the thumbnails below to visualize the patent trend.