1
Seung Beom Baek, Ja Chun Ku, Young Ho Lee, Jin Hyock Kim: Semiconductor device having resistive device. Hynix Semiconductor, IP & T Group, January 1, 2013: US08344346 (2 worldwide citation)

A semiconductor memory device includes a plurality of word lines vertically formed on a surface of a semiconductor substrate, where each pair of the plurality of word lines form a set of word lines, a bit line formed parallel to the surface of the semiconductor substrate and disposed in plurality st ...


2
Seung Beom Baek, Young Ho Lee, Jin Ku Lee, Mi Ri Lee: Schottky diode, resistive memory device having schottky diode and method of manufacturing the same. Hynix Semiconductor, IP & T Group, September 24, 2013: US08541775

A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schot ...


3
Young Ho Lee, Seung Beom Baek: Fabrication method of semiconductor apparatus. SK Hynix, IP & T Group, October 13, 2015: US09159632

A method of fabricating a semiconductor apparatus includes forming an insulating layer on a semiconductor substrate, forming a source post in the insulating layer, and forming a semiconductor layer over the source post and the insulating layer.


4
Jin Ku Lee, Jae Geun Oh, Young Ho Lee, Mi Ri Lee, Seung Beom Baek: Plasma doping method and method for fabricating semiconductor device using the same. SK Hynix, IP & T Group, June 9, 2015: US09054128

A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated usi ...


5
Seung Beom Baek, Bo Min Park, Young Ho Lee, Jong Chul Lee: Method for fabricating semiconductor device. SK Hynix, IP & T Group, December 30, 2014: US08921208

A method for fabricating a semiconductor device includes forming a first insulating layer in a first area of the semiconductor substrate, lowering a height of the semiconductor substrate in a second area and a height of the first insulating layer in the first area, selectively forming a sacrificial ...


6
Jong Chul Lee, Ja Chun Ku, Sung Kyu Min, Byung Jick Cho, Seung Beom Baek, Hyo June Kim, Won Ki Ju, Hyun Kyu Kim: Electronic device and method for fabricating the same. SK HYNIX, August 11, 2015: US09105840

According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacke ...


7
Oh Hyun Kim, Seung Beom Baek, Tae Hang Ahn: Semiconductor device and method for fabricating the same. SK Hynix, I P & T Group, April 4, 2017: US09614084

A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate structure formed over the channel region; a first SiP layer covering bottom corners of the gate structure and the recess; and a second SiP la ...


8
Young Ho Lee, Keum Bum Lee, Min Young Lee, Hyung Suk Lee, Seung Beom Baek: Access device having counter doping layer and semiconductor memory device having the same. SK Hynix, IP & T Group, April 28, 2015: US09018612

An access device having a reduced height and capable of suppressing leakage current, a method of fabricating the same, and a semiconductor memory device including the same, are provided. The access device may include a stacked structure including a first-type semiconductor layer having a first dopan ...


9
Min Yong Lee, Young Ho Lee, Seung Beom Baek, Jong Chul Lee: Resistive memory device and fabrication method thereof. SK Hynix, IP & T Group, March 17, 2015: US08980683

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the ...


10
Young Ho Lee, Keum Bum Lee, Min Yong Lee, Hyung Suk Lee, Seung Beom Baek: Fabrication method of semiconductor memory device. SK Hynix, IP & T Group, April 5, 2016: US09305775

An access device having a reduced height and capable of suppressing leakage current, a method of fabricating the same, and a semiconductor memory device including the same, are provided. The access device may include a stacked structure including a first-type semiconductor layer having a first dopan ...



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