1
Katherina Babich
Katherina E Babich, Scott D Halle, David V Horak, Arpan P Mahorowala, Wesley C Natzle, Dirk Pfeiffer, Hongwen Yan: Etch selectivity enhancement for tunable etch resistant anti-reflective layer. International Business Machines Corporation, Yuanmin Cai Esq, Hoffman Warnick & D Alessandro, July 18, 2006: US07077903 (4 worldwide citation)

Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching pattern transfer through the TERA laye ...


2
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris Esq, October 23, 2012: US08293454 (2 worldwide citation)

A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...


3
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, February 3, 2009: US07485573 (1 worldwide citation)

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


4
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, Daniel P Morris, June 28, 2011: US07968270

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


5
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Novak Druce Connolly Bove Quigg, Louis J Percello Esq, December 17, 2013: US08609322

A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...


6
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, August 23, 2007: US20070196748-A1

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...


7
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, March 5, 2009: US20090061355-A1

A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...


8
Katherina Babich
Katherina E Babich, Scott D Halle, David V Horak, Arpan P Mahorowala, Wesley C Natzle, Dirk Pfeiffer, Hongwen Yan: Etch selectivity enhancement for tunable etch resistant anti-reflective layer. International Business Machines Corporation, Hoffman Warnick & D Alessandro, May 12, 2005: US20050098091-A1

Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching pattern transfer through the TERA laye ...


9
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a lithographic structure using antireflective materials. International Business Machines Corporation, Connolly Bove Lodge & Hutz, January 18, 2007: US20070015082-A1

A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans ...


10
Katherina Babich
Marie Angelopoulos, Katherina E Babich, Sean D Burns, Richard A Conti, Allen H Gabor, Scott D Halle, Arpan P Mahorowala, Dirk Pfeiffer: Process of making a semiconductor device using multiple antireflective materials. Internation Business Machines Corporation, Connolly Bove Lodge & Hutz, December 18, 2008: US20080311508-A1

A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements s ...