1
Katherina Babich
Scott D Allen, Katherina E Babich, Steven J Holmes, Arpan P Mahorowala, Dirk Pfeiffer, Richard Stephan Wise: Techniques for patterning features in semiconductor devices. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris, April 18, 2006: US07030008 (8 worldwide citation)

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph ...


2
Katherina Babich
Scott D Allen, Katherina E Babich, Steven J Holmes, Arpan P Mahorowala, Dirk Pfeiffer, Richard Stephan Wise: Techniques for patterning features in semiconductor devices. International Business Machines Corporation, Daniel P Morris Esq, Ryan Mason & Lewis, June 9, 2009: US07545041 (3 worldwide citation)

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph ...


3
Katherina Babich
Scott D Allen, Katherina E Babich, Steven J Holmes, Arpan P Mahorowala, Dirk Pfeiffer, Richard Stephan Wise: Techniques for Patterning Features in Semiconductor Devices. International Business Machines Corporation, Ryan Mason & Lewis, August 7, 2008: US20080187731-A1

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph ...


4
Katherina Babich
Scott D Allen, Katherina E Babich, Steven J Holmes, Arpan P Mahorowala, Dirk Pfeiffer, Richard Stephan Wise: Techniques for patterning features in semiconductor devices. International Business Machines Corporation, Ryan Mason & Lewis, June 8, 2006: US20060118785-A1

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph ...


5
Katherina Babich
Scott D Allen, Katherina E Babich, Steven J Holmes, Arpan P Mahorowala, Dirk Pfeiffer, Richard Stephan Wise: Techniques for patterning features in semiconductor devices. International Business Machines Corporation, Ryan Mason & Lewis, March 17, 2005: US20050056823-A1

Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithograph ...


6
Scott D Allen, Geoffrey W Coates, Anna E Cherian, Chris A Simoneau, Alexei A Gridnev, Jay J Farmer: Polycarbonate polyol compositions and methods. Novomer, Choate Hall & Stewart, Charles E Lyon, John P Rearick, August 21, 2012: US08247520 (38 worldwide citation)

In one aspect, the present disclosure encompasses polymerization systems for the copolymerization of CO2 and epoxides comprising 1) a catalyst including a metal coordination compound having a permanent ligand set and at least one ligand that is a polymerization initiator, and 2) a chain transfer age ...


7
Scott D Allen, Geoffrey W Coates, Anna E Cherian, Chris A Simoneau, Alexei A Gridnev, Jay J Farmer: Polycarbonate polyol compositions and methods. Novomer, Choate Hall & Stewart, Charles E Lyon, John P Rearick, June 25, 2013: US08470956 (26 worldwide citation)

In one aspect, the present disclosure encompasses polymerization systems for the copolymerization of CO2 and epoxides comprising 1) a catalyst including a metal coordination compound having a permanent ligand set and at least one ligand that is a polymerization initiator, and 2) a chain transfer age ...


8
Geoffrey W Coates, Scott D Allen, Claire Cohen, Kathryn Peretti, Hiroharu Ajiro: Isotactic specific catalyst for direct production of highly isotactic poly (propylene oxide) or highly isotactic poly (butylene oxide). Cornell Research Foundation, Bacon & Thomas PLLC, July 15, 2008: US07399822 (26 worldwide citation)

(Salph or methoxy salph) Co (initiating ligand) catalyze homopolymerizing rac-PO to produce pure highly isotactic PPO and rac-1-butylene oxide to produce pure isotactic poly(butylene oxide). A product is unfractionated isotactic PPO of m-dyad content >81%, normally at least 99%.


9
Scott D Allen, Geoffrey W Coates, Anna E Cherian, Chris A Simoneau, Alexei A Gridnev, Jay J Farmer: Polycarbonate polyol compositions and methods. Novomer, Choate Hall & Stewart, Charles E Lyon, John P Rearick, December 10, 2013: US08604155 (25 worldwide citation)

In one aspect, the present disclosure encompasses polymerization systems for the copolymerization of CO2 and epoxides comprising 1) a catalyst including a metal coordination compound having a permanent ligand set and at least one ligand that is a polymerization initiator, and 2) a chain transfer age ...


10
Scott D Allen, Geoffrey W Coates, Anna E Cherian, Chris A Simoneau, Alexei A Gridnev, Jay J Farmer: Polycarbonate polyol compositions and methods. Novomer, Choate Hall & Stewart, Charles E Lyon, John P Rearick, December 30, 2014: US08921508 (21 worldwide citation)

In one aspect, the present disclosure encompasses polymerization systems for the copolymerization of CO2 and epoxides comprising 1) a catalyst including a metal coordination compound having a permanent ligand set and at least one ligand that is a polymerization initiator, and 2) a chain transfer age ...