1
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. Sundisk Corporation, Majestic Parsons Siebert & Hsue, December 15, 1992: US05172338 (1028 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable non-volatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading ...


2
Eliyahou Harari, Sanjay Mehrotra: Segmented column memory array. SunDisk Corporation, Majestic Parsons Siebert & Hsue, May 24, 1994: US05315541 (742 worldwide citation)

In an array of solid-state memory cells organized into rows and segmented columns and addressable by wordlines and bit lines, a memory cell within a segmented column is addressable by segment-select transistors which selectively connect the memory cell's pair of bit lines via conductive lines runnin ...


3
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash eeprom system. SunDisk Corporation, Majestic Parsons Siebert & Hsue, March 22, 1994: US05297148 (522 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


4
Daniel L Auclair, Jeffrey Craig, John S Mangan, Robert D Norman, Daniel C Guterman, Sanjay Mehrotra: Soft errors handling in EEPROM devices. SanDisk Corporation, Majestic Parsons Siebert & Hsue, August 12, 1997: US05657332 (488 worldwide citation)

Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulativ ...


5
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash EEprom system. SanDisk Corporation, Majestic Parsons Siebert & Hsue, February 11, 1997: US05602987 (457 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


6
Robert D Norman, Karl M J Lofgren, Jeffrey D Stai, Anil Gupta, Sanjay Mehrotra: Solid state memory system including plural memory chips and a serialized bus. Sundisk Corporation, Majestic Parsons Siebert & Hsue, July 4, 1995: US05430859 (450 worldwide citation)

A memory system includes an array of solid-state memory devices which are in communication with and under the control of a controller module via a device bus with very few lines. This forms an integrated-circuit mass storage system which is contemplated to replace a mass storage system such as a dis ...


7
Daniel L Auclair, Jeffrey Craig, John S Mangan, Robert D Norman, Daniel C Guterman, Sanjay Mehrotra: Soft errors handling in EEPROM devices. SanDisk Corporation, Majestic Parsons Siebert & Hsue, July 2, 1996: US05532962 (399 worldwide citation)

Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulativ ...


8
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash EEPROM system with erase sector select. Sundisk Corporation, Majestic Parsons Siebert & Hsue, May 23, 1995: US05418752 (380 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


9
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. SunDisk Corporation, Majestic Parsons Siebert & Hsue, November 10, 1992: US05163021 (362 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable nonvolatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading i ...


10
Eliyahou Harari, Daniel C Guterman, Sanjay Mehrotra, Stephen J Gross: Method for optimum erasing of EEPROM. SunDisk Corporation, Majestic Parsons Siebert & Hsue, December 14, 1993: US05270979 (359 worldwide citation)

Various optimizing techniques are used for erasing semiconductor electrically erasable programmable read only memories (EEPROM). An erase algorithm accomplishes erasing of a group of memory cells by application of incremental erase pulses. Techniques include a 2-phase verification process interleavi ...