1
Sanghoon Lee, Sungcheol Park: Noise filtering method and apparatus considering noise variance and motion detection. Samsung Electronics, Sughrue Mion PLLC, June 30, 2015: US09070185 (4 worldwide citation)

Provided herein are an apparatus and a method of performing image noise filtering with respect to an image obtained from an image sensor, the method including: applying a noise deviation with respect to a temporal difference between a previous pixel value and a current pixel value when obtaining a t ...


2
Sanghoon Lee, Christine Irene Podilchuk: Foveation-based error resilience algorithm. Alcatel Lucent USA, Williams Morgan & Amerson PC, March 16, 2010: US07679622 (3 worldwide citation)

A method for improving real-time video communications using a Foveation-based unequal error protection scheme (UEP) and error resilience. In a preferred embodiment of the present invention, a real time processing module partitions a video image into at least two data bit stream signals based on a di ...


3
Karthik Balakrishnan, Pouya Hashemi, Sanghoon Lee, Alexander Reznicek: Hybrid orientation vertically stacked III-V and Ge gate-all-around CMOS. INTERNATIONAL BUSINESS MACHINES CORPORATION, Shimokaji IP, October 18, 2016: US09472471 (3 worldwide citation)

A method of CMOS construction may include stacked III-V nanowires and stacked Ge nanowires. The CMOS construction may include a hybrid orientation with surface SOI and a standard substrate.


4
Guy M Cohen, Sanghoon Lee: III-V gate-all-around field effect transistor using aspect ratio trapping. International Business Machines Corporation, Louis J Percello Esq, Otterstedt Ellenbogen & Kammer, March 7, 2017: US09590107 (2 worldwide citation)

Embodiments of the invention provide methods for forming III-V gate-all-around field effect transistors on silicon substrates that utilize Aspect-Ratio Trapping to reduce or eliminate dislocation defects associated with lattice mismatches. A field dielectric material defining a trench is formed on a ...


5
Sanghoon Lee, Effendi Leobandung, Renee Mo, Brent A Wacaser: Growing groups III-V lateral nanowire channels. International Business Machines Corporation, Louis Percello, July 4, 2017: US09698239 (2 worldwide citation)

In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material se ...


6
Sanghoon Lee, Effendi Leobandung, Renee T Mo, Yanning Sun: Dual-semiconductor complementary metal-oxide-semiconductor device. International Business Machines Corporation, Louis J Percello Esq, Otterstedt Ellenbogen & Kammer, September 6, 2016: US09437614 (2 worldwide citation)

A method of forming an active device on a semiconductor wafer includes the steps of: forming a plurality of semiconductor fins on at least a portion of a semiconductor substrate; forming a dielectric layer on at least a portion of the semiconductor substrate, the dielectric layer filling gaps betwee ...


7
Chang Hyun Cho, Joonyeon Kim, Sang Gu Kang, Sanghoon Lee: Probe card, and apparatus and method for testing semiconductor device using the probe card. Samsung Electronics, Lee & Morse P C, July 23, 2013: US08493087 (1 worldwide citation)

A probe card transmitting electrical test signals between a tester and a semiconductor device includes a main circuit board configured to receive and transmit electrical signals from the tester, an interface unit electrically connected to the main circuit board, the interface unit including a signal ...


8
Steven Sanghoon Lee, Kevin Jerome Quirk, Ferze Daligues Patawaran: Media sharing and consumption. Andy T Pho, Shant Tchakerian, January 10, 2017: US09544351 (1 worldwide citation)

Multi-directional service decoupling and/or caching is provided. A storage medium is used to store a plurality of data file types, each file type configured for one or more of the user devices. A transaction manager is used for selectively managing the first transaction for the first user device the ...


9
Heuigeun Ryu, Ohhun Kwon, Sunghyuk Lee, Sanghoon Lee: Automatic balance adjusting centrifuge. Hanlab Corporation, Rothwell Figg Ernst & Manbeck P C, October 26, 2010: US07819792 (1 worldwide citation)

The present invention relates to the automatic balance adjusting centrifuge that enhances the efficiency of space utilization by simplifying the structure as well as supports a precise movement by improving the structure of the balance weight transport apparatus in the automatic balance adjusting ce ...


10
Guy M Cohen, Sanghoon Lee: III-V gate-all-around field effect transistor using aspect ratio trapping. International Business Machines Corporation, Louis J Percello Esq, Otterstedt Ellenbogen & Kammer, February 28, 2017: US09583567 (1 worldwide citation)

A field effect transistor includes a trench in a field dielectric material on a crystalline silicon substrate and source/drain features inside the trench. The field effect transistor further includes a channel feature comprising a III-V material in the trench and spanning between the source/drain fe ...