1
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, November 9, 2004: US06815329 (41 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


2
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, September 10, 2002: US06448655 (21 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


3
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Robert M Trepp Esq, August 29, 2006: US07098476 (18 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


4
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, July 6, 2004: US06759321 (11 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


5
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. Robert M Trepp, IBM Corporation, October 31, 2002: US20020158337-A1 (4 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


6
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. Robert M Trepp, Intellectual Property Law Department, March 21, 2002: US20020033535-A1

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


7
Katherina Babich
Katherina Babich, Alessandro Calleqari, Stephen Alan Cohen, Alfred Grill, Christophr Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Scully Scott Murphy & Presser, December 12, 2002: US20020185741-A1

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


8
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Scully Scott Murphy & Presser PC, February 17, 2005: US20050037604-A1

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


9
Michael Patrick Chudzik, Robert H Dennard, Rama Divakaruni, Bruce Kenneth Furman, Rajarao Jammy, Chandrasekhar Narayan, Sampath Purushothaman, Joseph F Shepard Jr, Anna Wanda Topol: High density chip carrier with integrated passive devices. Internation Business Machines Corporation, Daniel P Morris Esq, Perman & Green, April 18, 2006: US07030481 (256 worldwide citation)

A carrier for a semiconductor component is provided having passive components integrated in its substrate. The passive components include decoupling components, such as capacitors and resistors. A set of connections is integrated to provide a close electrical proximity to the supported components.


10
Michael Patrick Chudzik, Robert H Dennard, Rama Divakaruni, Bruce Kenneth Furman, Rajarao Jammy, Chandrasekhar Narayan, Sampath Purushothaman, Joseph F Shepard Jr, Anna Wanda Topol: High density chip carrier with integrated passive devices. International Business Machines Corporation, Daniel P Morris, Perman & Green, November 8, 2005: US06962872 (243 worldwide citation)

A carrier for a semiconductor component is provided having passive components integrated in its substrate. The passive components include decoupling components, such as capacitors and resistors. A set of connections is integrated to provide a close electrical proximity to the supported components.