1
Ramachandra Divakaruni, Russell J Houghton, Jack A Mandelman, W David Pricer, William R Tonti: Method for novel SOI DRAM BICMOS NPN. International Business Machines Corporation, Mark F Chadurjian, Eugene I Shkurko, F William McLaughlin, December 10, 2002: US06492211 (125 worldwide citation)

There is disclosed herein a unique fabrication sequence and the structure of a vertical silicon on insulator (SOI) bipolar transistor integrated into a typical DRAM trench process sequence. A DRAM array utilizing an NFET allows for an integrated bipolar NPN sequence. Similarly, a vertical bipolar PN ...


2
Claude Louis Bertin, John A Fifield, Erik Leigh Hedberg, Russell J Houghton, Timothy Dooling Sullivan, Steven William Tomashot, William Robert Tonti: Impedance control using fuses. International Business Machines Corporation, Howard J Walker Jr esq, Scully Scott Murphy & Presser, October 31, 2000: US06141245 (60 worldwide citation)

A system and method for reducing impedance loading of semiconductor integrated circuit devices implementing protective device structures that contributes to impedance loading at an I/O pad connection. The method comprises providing a fuse device between the I/O pad connection and the protective devi ...


3
Claude L Bertin, John A Fifield, Russell J Houghton, William R Tonti, Nicholas M Van Heel: Methods and apparatus for blowing and sensing antifuses. International Business Machines Corporation, Kelly M Reynolds, Robert A Walsh, Dugan & Dugan, February 12, 2002: US06346846 (59 worldwide citation)

Methods and apparatus for blowing and sensing antifuses are provided. Specifically, in a first aspect, a method is provided for changing the state of one of a plurality of antifuses by selecting one of the bank of antifuses and applying a high voltage to change the state of the selected antifuse. In ...


4
Russell J Houghton, Ernst J Stahl: Current source. Siemens Aktiengesellschaft, International Business Machines Corporation, Stanton C Braden, July 11, 2000: US06087820 (51 worldwide citation)

A method and circuit for producing an output current is provided. The method and circuit adds two currents with opposing temperature coefficients to produce such output current. A first one of the two currents, I.sub.1, is a scaled copy of current produced in a temperature compensated bandgap refere ...


5
John A Fifield, Russell J Houghton, William R Tonti: High impedance antifuse. International Business Machines Corporation, Robert A Walsh, June 22, 2004: US06753590 (44 worldwide citation)

A programmable element that has a first diode having an electrode and a first insulator disposed between the substrate and said electrode of said first device, said first insulator having a first value of a given characteristic, and an FET having an electrode and a second insulator disposed between ...


6
Louis L Hsu, Rajiv V Joshi, Russell J Houghton: Low-power band-gap reference and temperature sensor circuit. International Business Machines Corporation, Louis J Percello, April 5, 2005: US06876250 (42 worldwide citation)

A combined low-voltage, low-power band-gap reference and temperature sensor circuit is provided for providing a band-gap reference parameter and for sensing the temperature of a chip, such as an eDRAM memory unit or CPU chip, using the band-gap reference parameter. The combined sensor circuit is ins ...


7
Louis L Hsu, Rajiv V Joshi, Russell J Houghton: Low-power band-gap reference and temperature sensor circuit. IBM Corporation, Dilworth & Barrese, March 11, 2003: US06531911 (42 worldwide citation)

A combined low-voltage, low-power band-gap reference and temperature sensor circuit is provided for providing a band-gap reference parameter and for sensing the temperature of a chip, such as an eDRAM memory unit or CPU chip, using the band-gap reference parameter. The combined sensor circuit is ins ...


8
Claude L Bertin, John A Fifield, Russell J Houghton, Christopher P Miller, William R Tonti: Multi-level storage gain cell with stepline. International Business Machines Corporation, Robert A Walsh, Schmeiser Olsen & Watts, June 2, 1998: US05761114 (36 worldwide citation)

A method and apparatus for using multi-level signals in a gain cell is shown. The method involves of first, storing a value of a multi-level signal in the gain cell. A stepping waveform is then applied to the gain cell and the gain cell outputs a conduction signal when the level of the stepping wave ...


9
Claude L Bertin, Russell J Houghton, Wilbur D Pricer, William R Tonti: Very low power logic circuit family with enhanced noise immunity. International Business Machines Corporation, Eugene I Shkurko Esq, Scully Scott Murphy & Presser, August 29, 2000: US06111425 (36 worldwide citation)

A very low power logic circuit family which advantageously provides 1) retained high performance, 2) significantly reduced power dissipation, and 3) enhanced noise immunity. In a first set of embodiments, dual rail complementary logic signals are utilized to improve circuit immunity to external nois ...


10
Ciaran J Brennan, John K DeBrosse, Russell J Houghton: Capacitively coupled sensing apparatus and method for cross point magnetic random access memory devices. International Business Machines Corporation, Margaret A Pepper, Cantor Colburn, November 9, 2004: US06816403 (33 worldwide citation)

A method for sensing data stored within a cross point magnetic random access memory (MRAM) device includes establishing an offset voltage of a sense amplifier, the sense amplifier selectively coupled to a selected bitline within the MRAM device, the selected bitline being in communication with an MR ...



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