1
Russell C Zahorik, Alan R Reinberg: Method of making chalogenide memory device. Micron Technology, Fletcher Yoder & Edwards, August 4, 1998: US05789277 (449 worldwide citation)

A method for fabricating chalcogenide memories in which ultra-small pores are formed in insulative layers using disposable spacers. The chalcogenide memory elements are positioned within the ultra-small pores. The chalcogenide memory elements thus defined have minimum lateral dimensions ranging from ...


2
Graham R Wolstenholme, Fernando Gonzalez, Russell C Zahorik: Memory cell incorporating a chalcogenide element and method of making same. Micron Technology, Fletcher Yoder & Van Someren, May 22, 2001: US06236059 (395 worldwide citation)

A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer proc ...


3
Graham R Wolstenholme, Fernando Gonzalez, Russell C Zahorik: Memory cell incorporating a chalcogenide element and method of making same. Micron Technology, Fletcher Yoder & Edwards, December 7, 1999: US05998244 (298 worldwide citation)

A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer proc ...


4
Alan R Reinberg, Russell C Zahorik deceased: Small electrode for a chalcogenide switching device and method for fabricating same. Micron Technology, Fletcher Yoder & Van Someren, September 14, 1999: US05952671 (262 worldwide citation)

A memory cell and a method of fabricating the memory cell having a small active area. By forming a spacer in a window that is sized at the photolithographic limit, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the por ...


5
Graham R Wolstenholme, Fernando Gonzalez, Russell C Zahorik: Method of making memory cell incorporating a chalcogenide element. Micron Technology, Fletcher Yoder & Van Someren, October 19, 1999: US05970336 (248 worldwide citation)

A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer proc ...


6
Alan R Reinberg, Russell C Zahorik: Small electrode for a chalcogenide switching device and method for fabricating same. Micron Technology, Fletcher Yoder & Van Someren, February 20, 2001: US06189582 (241 worldwide citation)

A memory cell and a method of fabricating the memory cell having a small active area. By forming a spacer in a window that is sized at the photolithographic limit, a pore may be formed in dielectric layer which is smaller than the photolithographic limit. Electrode material is deposited into the por ...


7
Russell C Zahorik: Integrated circuit memory cell having a small active area and method of forming same. Fletcher Yoder & Van Someren, September 5, 2000: US06114713 (240 worldwide citation)

A method for manufacturing a memory device having a plurality of memory cells. Each memory cell has a non-volatile resistive memory element with a small active area. A plurality of memory cells are formed at selected locations of at least a portion of a semiconductor wafer. To form the memory cells, ...


8
Graham R Wolstenholme, Fernando Gonzalez, Russell C Zahorik: Memory cell incorporating a chalcogenide element. Micron Technology, Fletcher Yoder & Van Someren, November 28, 2000: US06153890 (225 worldwide citation)

A memory cell incorporating a chalcogenide element and a method of making same is disclosed. In the method, a doped silicon substrate is provided with two or more polysilicon plugs to form an array of diode memory cells. A layer of silicon nitride is disposed over the plugs. Using a poly-spacer proc ...


9
Russell C Zahorik, Alan R Reinberg: Method of making chalcogenide memory device. Micron Technology, Fletcher Yoder & Van Someren, November 13, 2001: US06316784 (175 worldwide citation)

A method for fabricating chalcogenide memories in which ultra-small pores are formed in insulative layers using disposable spacers. The chalcogenide memory elements are positioned within the ultra-small pores. The chalcogenide memory elements thus defined have minimum lateral dimensions ranging from ...


10
Russell C Zahorik: Small electrode for chalcogenide memories. Micron Technology, Fletcher Yoder & Van Someren, January 8, 2002: US06337266 (81 worldwide citation)

A method for fabricating an ultra-small electrode or plug contact for use in chalcogenide memory cells specifically, and in semiconductor devices generally, in which disposable spacers are utilized to fabricate ultra-small pores into which the electrodes are formed. The electrodes thus defined have ...