1
Robert J Markunas, Robert Hendry, Ronald A Rudder: Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, January 19, 1993: US05180435 (131 worldwide citation)

A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein a intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These ...


2
Robert J Markunas, Robert Hendry, Ronald A Rudder: Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, September 26, 1989: US04870030 (51 worldwide citation)

A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. Thes ...


3
Robert J Markunas, Robert Hendry, Ronald A Rudder: Remote plasma enhanced CVD method and apparatus for growing an epitaxial semconductor layer. Reserach Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, May 28, 1991: US05018479 (44 worldwide citation)

A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. Thes ...


4
Ronald A Rudder, George C Hudson, Robert C Hendry, Robert J Markunas: Chemical vapor deposition of diamond films using water-based plasma discharges. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, May 23, 1995: US05418018 (10 worldwide citation)

A chemical vapor deposition (CVD) technique (process and apparatus) for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite disclosed. The selected compounds are reacted i ...


5
Ronald A Rudder, Raymond E Thomas: Method for producing diamond-tiled cooking utensils and other workpieces for durable stick-resistant surfaces. Oblon Spivak McClelland Maier & Neustadt P C, July 10, 2001: US06258418 (9 worldwide citation)

A method for producing a durable, non-stick, diamond-tiled implement and the diamond-tiled implement thereby produced. Diamond particles are distributed on a surface of a workpiece containing a ceramic binder. The ceramic binder on the surface of the workpiece is heated to above its glass temperatur ...


6
Daniel J Vitkavage, Gaius G Fountain, Sunil Hattangady, Ronald A Rudder, Robert J Markunas: Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, December 1, 1992: US05168330 (8 worldwide citation)

A semiconductor device including a single crystal semiconductor host material having a surface; an ultrathin pseudomorphic single crystal epitaxial interlayer formed on the surface of the host material, wherein the interlayer is formed of a material and has a thickness selected so that the material ...


7
Anthony E Robson, Ronald A Rudder, Robert C Hendry, Moses M David, James V Burt: Durable plasma treatment apparatus and method. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt P C, August 22, 2000: US06105518 (4 worldwide citation)

A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewal ...


8
Ronald A Rudder, George C Hudson, Robert C Hendry, Robert J Markunas, Michael J Mantini: Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, January 2, 1996: US05480686 (4 worldwide citation)

A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedsto ...


9
Anthony E Robson, Ronald A Rudder, Robert C Hendry, Moses M David, James V Burt: Durable plasma treatment apparatus and method. Berkeley Scholars, Research Triangle Institute, Minnesota Mining and Manufacturing Company, Oblon Spivak McClelland Maier & Neustadt P C, February 23, 1999: US05874014 (3 worldwide citation)

A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewal ...


10
Ronald A Rudder, Raymond E Thomas: Diamond-tiled workpiece for durable surfaces. Oblon Spivak McClelland Maier & Neustadt P C, February 4, 2003: US06514605 (3 worldwide citation)

A method for producing a durable, non-stick, diamond-tiled implement and the diamond-tiled implement thereby produced. Diamond particles are distributed on a surface of a workpiece containing a ceramic binder. The ceramic binder on the surface of the workpiece is heated to above its glass temperatur ...