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Ronald A Carpio: Copper chemical mechanical polishing slurry utilizing a chromate oxidant. Sematech, Arnold White & Durkee, November 24, 1998: US05840629 (118 worldwide citation)

There is described a slurry for use in chemical mechanical polishing of copper layers in integrated circuit fabrication. The slurry includes a chromate oxidant, such as sodium chromate tetrahydrate (Na.sub.2 CrO.sub.4.4H.sub.2 O). The chromate oxidant provides a slightly basic slurry solution that e ...


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Ronald A Carpio: Scheme for bath chemistry measurement and control for improved semiconductor wet processing. Sematech, William W Kidd, November 15, 1994: US05364510 (61 worldwide citation)

A feedback control system for providing automated and in-situ control of multi-component chemical concentrations in a liquid bath used for semiconductor processing. A sample from the liquid bath is injected into a carrier stream and routed to a conductivity detector and to an amperometric detector. ...


3
Ronald A Carpio: CMP slurry measurement and control technique. Sematech, Arnold White & Durkee, December 8, 1998: US05846398 (59 worldwide citation)

Chemical mechanical polishing slurry characteristics, such as oxidant concentration and abrasive particle dispersion, are determined using electrochemical measurement techniques, such as chronoamperometry, amperometry, chronopotentiometry, ionic conductivity, or linear sweep potentiometry. Slurry ch ...


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Ronald A Carpio: Concentration measurement and control of hydrogen peroxide and acid/base component in a semiconductor bath. Sematech, William W Kidd, August 8, 1995: US05439569 (46 worldwide citation)

A feedback control system for providing automated control of multi-component chemical concentrations in a hydrogen peroxide/ammonia (SC-1) aqueous bath or in a hydrogen peroxide/hydrochloric (SC-2) aqueous bath used for semiconductor processing. A sample from the liquid bath is routed to two sensors ...


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Ronald A Carpio, Rahul Jairath, Jayashree Kalpathy Cramer: Slurry formulation for chemical mechanical polishing of metals. Sematech, Arnold White & Durkee, February 2, 1999: US05866031 (36 worldwide citation)

Buffered slurries are used in a semiconductor process for chemical mechanical polishing of metal layers, such as aluminum or titanium. The slurries may comprise an oxidant capable of causing a passive oxide film to form on a metal based layer. The oxidant may comprise a diluent and may be optionally ...


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Ronald A Carpio: Fast method of measuring phosphorous concentration in PSG and BPSG films. Inmos Corporation, Edward D Manzo, December 13, 1988: US04791296 (13 worldwide citation)

A method of measuring the phosphorus concentration in phosphosilicate and borophosphosilicate films using infrared spectroscopy in conjuction with derivative spectroscopic techniques. This method is easily adapted for use with a Fourier Transform spectrometer. A spectrum of the film is taken with a ...


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Robert L Vaughn, Ronald A Carpio, Lowell A King: Solid state tetrachloroaluminate storage battery having a transition metal chloride cathode. The United States of America represented by the Secretary of the Air Force, Stanton E Collier, Donald J Singer, August 16, 1988: US04764438 (10 worldwide citation)

A pelletized, thermally activated, lightweight power source composed of a lithium alloy solid anode, a transition metal chloride-graphite solid cathode and an alkali metal tetrachloroaluminate solid state electrolyte positioned between and in contact with said anode and cathode.


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John C Nardi, Charles L Hussey, Lowell A King, Ronald A Carpio: Method for the preparation of 1-alkyl pyridinium chlorides. Joseph E Rusz, William J O Brien, September 19, 1978: US04115390 (1 worldwide citation)

A method for preparing alkyl pyridinium chlorides by effecting a direct reaction between the corresponding alkyl chloride and pyridine.