1
Richard J Lebel, Rock Nadeau, Martin P O&apos Boyle, Paul H Smith Jr, Theodore G van Kessel, Hemantha K Wickramasinghe: Chemical mechanical polishing in-situ end point system. International Business Machines Corporation, Howard J Walter Jr Esq, McGinn & Gibb PLLC, January 1, 2002: US06334807 (53 worldwide citation)

A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive su ...


2
Timothy Scott Bullard, Richard John Lebel, Rock Nadeau, Paul Henry Smith Jr: In-situ pad conditioning process for CMP. International Business Machines Corporation, Shirley S MA, Howard J Walter Jr, DeLio & Peterson, February 8, 2000: US06022266 (30 worldwide citation)

An improved method of in-situ conditioning of a polishing pad for use with a stationary pad conditioner during chemical mechanical polishing is described. A polishing table having a polishing pad on its surface is rotated in a first direction during polishing of a semiconductor wafer. A polishing pa ...


3
Leping Li, Steven George Barbee, Gary Richard Doyle, Arnold Halperin, Kevin L Holland, Francis Walter Kazak, Robert B Lipori, Anne Elizabeth McGuire, Rock Nadeau, William Joseph Surovic: Rotary signal coupling for chemical mechanical polishing endpoint detection with a westech tool. International Business Machines Corporation, Alison D Mortinger, September 2, 1997: US05663637 (20 worldwide citation)

Rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process. A sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process is coupled to a bottom half of a rotary transformer fixed to a rotating portion of the po ...


4
Daniel D Desorcie, Richard J Lebel, Charles A McKinney, Rock Nadeau, Timothy J Rickard Jr, Paul H Smith Jr, Douglas K Sturtevant, Matthew T Tiersch: CMP wafer carrier for preferential polishing of a wafer. International Business Machines Corporation, John J Tomaszewski, Howard J Walter Jr, DeLio & Peterson, March 23, 1999: US05885135 (11 worldwide citation)

An apparatus for polishing a semiconductor wafer is provided which includes a wafer carrier having on its lower surface a non-uniform surface structure means to vary the force against a wafer during a polishing operation so that the polishing is enhanced and imparts a planar surface across the polis ...


5
Richard J Lebel, Frederic Maurer, Rock Nadeau, Paul H Smith Jr, Hemantha K Wickramasinghe, Theodore G van Kessel: Chemical-mechanical polishing system and method for integrated spin dry-film thickness measurement. International Business Machines Corporation, Robert A Walsh Esq, McGinn & Gibb PLLC, November 20, 2001: US06319093 (10 worldwide citation)

A system and method that integrates film thickness measurements with a chemical-mechanical polishing (CMP) spin-dry tool. By doing so, each wafer can be measured as it comes out of the previous CMP process. Thickness measurement feedback is provided, which controls processing of the wafer and also m ...


6
Faye Diann Baker, Daniel Shaw Brooks, Robert Kenneth Leidy, Anne Elizabeth McGuire, Rock Nadeau: Dishing and erosion monitor structure for damascene metal processing. Internatioal Business Machines Corporation, Howard Walter Jr, Schmeiser Olsen & Watts, February 23, 1999: US05874318 (10 worldwide citation)

According to the preferred embodiment, an erosion and dishing monitor and monitor method are provided that facilitates the accurate optimization of a planarization process as in semiconductor process. The dishing monitor comprises at least two monitor structure sets embedded in a semiconductor subst ...


7
Faye Diann Baker, Daniel Shaw Brooks, Robert Kenneth Leidy, Anne Elizabeth McGuire, Rock Nadeau: Dishing and erosion monitor structure for damascene metal processing. International Business Machines Corporation, Howard Walter Esq, Schmeiser Olsen & Watts, March 3, 1998: US05723874 (6 worldwide citation)

According to the preferred embodiment, an erosion and dishing monitor is provided that facilitates the accurate optimization of a planarization process as in semiconductor process. The dishing monitor comprises at least two monitor structure sets embedded in a semiconductor substrate, the monitor st ...


8
Jeffrey A Brigante, Thomas L Conrad, David J Fontaine, Rock Nadeau, Paul H Smith Jr, Theodore G van Kessel: Slurry recirculation in chemical mechanical polishing. International Business Machines Corporation, Robert A Walsh, October 1, 2002: US06458020 (4 worldwide citation)

A recirculation mechanism is used to force slurry toward the center of a platen used for chemical-mechanical polishing. The recirulator captures the slurry that would otherwise be flung from a rotating platen because of centrifugal force. The captured slurry is forced upwardly away from the surface ...


9
Richard J Lebel, Frederic Maurer, Rock Nadeau, Paul H Smith Jr, Hemantha K Wickramasinghe, Theodore G van Kessel: Support and alignment device for enabling chemical mechanical polishing rinse and film measurements. International Business Machines Corporation, Robert A Walsh Esq, McGinn & Gibb PLLC, June 17, 2003: US06579149 (3 worldwide citation)

A device and method for providing precision alignment and support for an optical film measurement probe in the wafer rinse tank of a CMP polish tool. The device includes of a probe carrier, and spring loaded support guides attached to a support ring that supports and locates the mechanism in the rin ...


10
Thomas F Curran Jr, Timothy C Krywanczyk, Michael S Lube, Matthew D Moon, Rock Nadeau, Clark D Reynolds, Dean A Schaffer, Joel M Sharrow, Paul H Smith Jr, David C Thomas, Eric J White, Kenneth H Yao: Method for reworking copper metallurgy in semiconductor devices. International Business Machines Corporation, Howard J Walter Jr, January 22, 2002: US06340601 (3 worldwide citation)

A method of reworking copper metallurgy on semiconductor devices which includes selective removal of insulator, selective removal of copper, non-selective removal of copper and insulator followed by the redeposition of an insulating copper barrier layer and at least one metallurgical interconnect la ...