1
Deva N Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu, Kam Hong Lui, Kuo In Chen, Sharon Shi: Super trench MOSFET including buried source electrode and method of fabricating the same. Siliconix incorporated, Silicon Valley Patent Group, February 27, 2007: US07183610 (70 worldwide citation)

In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes t ...


2
Deva N Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu, Kam Hong Lui, Kuo In Chen, Sharon Shi: Super trench MOSFET including buried source electrode. Siliconix Incorporated, Patentability Associates, July 7, 2009: US07557409 (15 worldwide citation)

In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes t ...


3
Deva N Pattanayak, Robert Xu: Closed cell trench metal-oxide-semiconductor field effect transistor. Vishay Siliconix, October 9, 2007: US07279743 (15 worldwide citation)

Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plu ...


4
Deva N Pattanayak, Robert Xu: Method of manufacturing a closed cell trench MOSFET. Vishay Siliconix, November 16, 2010: US07833863 (13 worldwide citation)

Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plu ...


5
Deva N Pattanayak, Robert Xu: Method of manufacturing a closed cell trench MOSFET. Vishay Siliconix, April 22, 2008: US07361558 (12 worldwide citation)

Embodiments of the present invention provide an improved closed cell trench metal-oxide-semiconductor field effect transistor (TMOSFET). The closed cell TMOSFET comprises a drain, a body region disposed above the drain region, a gate region disposed in the body region, a gate insulator region, a plu ...


6
Qufei Chen, Robert Xu, Kyle Terrill, Deva Pattanayak: Trench polysilicon diode. Vishay Siliconix, June 9, 2009: US07544545 (9 worldwide citation)

Embodiments of the present invention include a method of manufacturing a trench polysilicon diode. The method includes forming a N−(P−) type epitaxial region on a N+(P+) type substrate and forming a trench in the N−(P−) type epitaxial region. The method further includes forming a insulating layer in ...


7
Qufei Chen, Robert Xu, Kyle Terrill, Deva Pattanayak: Trench polysilicon diode. Vishay Siliconix, August 30, 2016: US09431550 (5 worldwide citation)

Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench ...


8
Deva N Pattanayak, Yuming Bai, Kyle Terrill, Christiana Yue, Robert Xu, Kam Hong Lui, Kuo In Chen, Sharon Shi: Method of fabricating super trench MOSFET including buried source electrode. Siliconix incorporated, Patentability Associates, April 27, 2010: US07704836 (2 worldwide citation)

In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes t ...


9
Deva Pattanayak, King Owyang, Mohammed Kasem, Kyle Terrill, Reuven Katraro, Kuo In Chen, Calvin Choi, Qufei Chen, Ronald Wong, Kam Hong Lui, Robert Xu: Semiconductor device with trench-like feed-throughs. Vishay Siliconix, April 5, 2016: US09306056 (1 worldwide citation)

A semiconductor device (e.g., a flip chip) includes a substrate layer that is separated from a drain contact by an intervening layer. Trench-like feed-through elements that pass through the intervening layer are used to electrically connect the drain contact and the substrate layer when the device i ...


10
Qufei Chen, Robert Xu, Kyle Terrill, Deva Pattanayak: Trench polysilicon diode. Vishay Siliconix, December 6, 2011: US08072013 (1 worldwide citation)

Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench ...