1
Robert P Mandal, David Cheung, Wai Fan Yau: CVD nanoporous silica low dielectric constant films. Applied Materials, Thomason Moser & Patterson, January 9, 2001: US06171945 (149 worldwide citation)

A method and apparatus for depositing nano-porous low dielectric constant films by reaction of a silicon hydride containing compound or mixture optionally having thermally labile organic groups with a peroxide compound on the surface of a substrate. The deposited silicon oxide based film is annealed ...


2
David Cheung, Wai Fan Yau, Robert P Mandal, Shin Puu Jeng, Kuo Wei Liu, Yung Cheng Lu, Michael Barnes, Ralf B Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon: Plasma processes for depositing low dielectric constant films. Applied Materials, Thomason Moser & Patterson, October 16, 2001: US06303523 (145 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased ...


3
David Cheung, Wai Fan Yau, Robert P Mandal, Shin Puu Jeng, Kuo Wei Liu, Yung Cheng Lu, Michael Barnes, Ralf B Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon: Plasma processes for depositing low dielectric constant films. Applied Materials, Moser Patterson & Sheridan, December 9, 2003: US06660656 (92 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased pri ...


4
Robert P Mandal: Process for electrically interconnecting chips with substrates employing gold alloy bumps and magnetic materials therein. Itek Corporation, Homer O Blair, Robert L Nathans, October 19, 1976: US03986255 (68 worldwide citation)

Gold alloy bumps are built up upon conductive pads formed upon electronic chips. The bumps are thereafter aligned with conductive portions of a generally larger substrate to which the chips are to be electrically connected. The bumps are produced by either vacuum evaporating or plating metallic laye ...


5
David Cheung, Wai Fan Yau, Robert P Mandal, Shin Puu Jeng, Kuo Wei Liu, Yung Cheng Lu, Michael Barnes, Ralf B Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon: Plasma processes for depositing low dielectric constant films. Applied Materials, Thomason Moser & Patterson, February 19, 2002: US06348725 (67 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased ...


6
Robert P Mandal: Very low dielectric constant plasma-enhanced CVD films. Applied Materials, Moser Patterson & Sheridan, April 1, 2003: US06541367 (58 worldwide citation)

The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally labile groups with nitrous oxide, oxyg ...


7
David Cheung, Wai Fan Yau, Robert P Mandal, Shin Puu Jeng, Kuo Wei Liu, Yung Cheng Lu, Michael Barnes, Ralf B Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon: Plasma processes for depositing low dielectric constant films. Applied Materials, Moser Patterson & Sheridan, May 13, 2003: US06562690 (53 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased pri ...


8
Robert P Mandal, James C Grambow, Ted C Bettes, Donald R Sauer, Emir Gurer, Edmond R Ward: Method of uniformly coating a substrate. Silicon Valley Group, William B Walker, September 23, 1997: US05670210 (47 worldwide citation)

A method of and an apparatus for coating a substrate with a polymer solution to produce a film of uniform thickness, includes mounting the substrate inside an enclosed housing and passing a control gas, which may be a solvent vapor-bearing gas into the housing through an inlet. The polymer solution ...


9
David Cheung, Wai Fan Yau, Robert P Mandal, Shin Puu Jeng, Kuo Wei Liu, Yung Cheng Lu, Michael Barnes, Ralf B Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon: Plasma processes for depositing low dielectric constant films. Applied Materials, Moser Patterson & Sheridan, July 22, 2003: US06596655 (43 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased pri ...


10
David Cheung, Wai Fan Yau, Robert P Mandal, Shin Puu Jeng, Kuo Wei Liu, Yung Cheng Lu, Michael Barnes, Ralf B Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon: Plasma processes for depositing low dielectric constant films. Applied Materials, Moser Patterson & Sheridan, April 1, 2003: US06541282 (43 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased ...