1
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Richard J Rassel, Robert M Rassel: Tunable temperature coefficient of resistance resistors and method of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony Canale, May 15, 2007: US07217981 (15 worldwide citation)

Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitud ...


2
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, April 22, 2008: US07361993 (11 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


3
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Richard J Rassel, Robert M Rassel: Tunable temperature coefficient of resistance resistors and method of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony J Canale, February 9, 2010: US07659176 (5 worldwide citation)

Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitud ...


4
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, February 24, 2009: US07494912 (5 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


5
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Terence B Hook, Robert M Rassel, Edmund J Sprogis, Anthony K Stamper, William J Murphy: Heat sink for integrated circuit devices. International Business Machines Corporation, Anthony Canale, Roberts Mlotkowski Safran & Cole P C, August 9, 2011: US07994895 (3 worldwide citation)

A resistor with heat sink is provided. The heat sink includes a conductive path having metal or other thermal conductor having a high thermal conductivity. To avoid shorting the electrical resistor to ground with the thermal conductor, a thin layer of high thermal conductivity electrical insulator i ...


6
Eb Eshun
Ebenezer E Eshun, Jeffrey B Johnson, Richard A Phelps, Robert M Rassel, Michael J Zierak: Junction field effect transistor with a hyperabrupt junction. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Richard Kotulak Esq, November 2, 2010: US07825441 (3 worldwide citation)

A junction field effect transistor (JFET) has a hyperabrupt junction layer that functions as a channel of a JFET. The hyperabrupt junction layer is formed by two dopant profiles of opposite types such that one dopant concentration profile has a peak concentration depth at a tail end of the other dop ...


7
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Alvin J Joseph, Robert M Rassel: Reduced guard ring in schottky barrier diode structure. International Business Machines Corporation, Richard M Kotulak Esq, Greenblum & Bernstein, August 29, 2006: US07098521 (3 worldwide citation)

Schottky barrier diodes use a dielectric separation region to bound an active region. The dielectric separation region permits the elimination of a guard ring in at least one dimension. Further, using a dielectric separation region in an active portion of the integrated circuit device may reduce or ...


8
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, John E Florkey, Robert M Rassel, Kunal Vaed: Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Joseph P Abate Esq, April 6, 2010: US07691717 (3 worldwide citation)

A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18 to about 1e2 ...


9
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Robert M Rassel, Anthony K Stamper: Resistor tuning. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony J Canale, July 3, 2007: US07239006 (3 worldwide citation)

A structure for resistors and the method for tuning the same. The resistor comprises an electrically conducting region coupled to a liner region. Both the electrically conducting region and the liner region are electrically coupled to first and second contact regions. A voltage difference is applied ...


10
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Terence B Hook, Robert M Rassel, Edmund J Sprogis, Anthony K Stamper, William J Murphy: Method of cooling a resistor. International Business Machines Corporation, Anthony Canale, Roberts Mlotkowski Safran & Cole P C, July 31, 2012: US08230586 (1 worldwide citation)

A method of cooling a resistor is provided. The method includes forming a first electrical insulator having a high thermal conductivity in thermal contact with an electrically resistive pathway and forming a substrate adjacent the electrical insulator. The method further includes forming a first ele ...