11
Robert J Markunas, Gaius G Fountain, Robert C Hendry: Plasma processing system and method. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt P C, September 26, 2006: US07112536 (3 worldwide citation)

A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple power inductively into the chamber and ...


12
Tatsuo Morita, Robert J Markunas: Method of fabricating a thin film transistor. Sharp Kabushiki, Research Triangle Institute, Nixon and Vanderhye, December 17, 1996: US05585292 (2 worldwide citation)

A thin film transistor comprises an insulator interposed between a gate electrode and a polycrystalline silicon semiconductor layer, with the polycrystalline silicon semiconductor layer having a source region and a drain region with a channel between the source region and the drain region. The insul ...


13
Salah M Bedair, Robert J Markunas, Michael L Timmons, James A Hutchby, John R Hauser: Patterned tunnel junction. The United States of America represented by the Secretaryof the Air Force, William G Auton, Donald J Singer, September 5, 1989: USH0000667

A multijunction solar cell is disclosed which uses a patterned intercell ohmic connection as the tunnel junction to connect a top solar cell in electrical and optical series with a bottom solar cell. By confining this patterned tunnel junction to shadowed areas directly beneath the top surface metal ...


14
Tatsuo Morita, Robert J Markunas: Thin film transistor and method of fabrication. Sharp, LIU LIPING, November 19, 1996: CN95113143

A thin film transistor comprises an insulator interposed between a gate electrode and a polycrystalline silicon semiconductor layer, with the polycrystalline silicon semiconductor layer having a source region and a drain region with a channel between the source region and the drain region. The insul ...


15
Robert J Markunas, Gaius G Fountain, Robert C Hendry: Plasama processing system and method. Research Triangle Insitute, Oblon Spivak Mcclelland Maier & Neustadt PC, June 12, 2003: US20030106641-A1

A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple power inductively into the chamber and ...


16
Robert J Markunas, John B Posthill, Robert C Hendry, Raymond Thomas: Plasma furnace disposal of hazardous wastes. Research Triangle Institute, Oblon Spivak Mcclelland Maier & Neustadt PC, April 11, 2002: US20020040889-A1

A method and apparatus for plasma waste disposal of hazardous waste material, where the hazardous material is volatilized under vacuum inside a containment chamber to produce a pre-processed gas as input to a plasma furnace including a plasma-forming region in which a plasma-forming magnetic field i ...