1
Robert J Markunas, Robert Hendry, Ronald A Rudder: Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, January 19, 1993: US05180435 (131 worldwide citation)

A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein a intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These ...


2
Arvid C Johnson, Robert J Lauf, Don W Bible, Robert J Markunas: Apparatus and method for microwave processing of materials. Martin Marietta Energy Systems, Jeffrey N Cutler, J M Spicer, H W Adams, May 28, 1996: US05521360 (88 worldwide citation)

A variable frequency microwave heating apparatus (10) designed to allow modulation of the frequency of the microwaves introduced into a furnace cavity (34) for testing or other selected applications. The variable frequency heating apparatus (10) is used in the method of the present invention to moni ...


3
Robert J Markunas, Robert Hendry, Ronald A Rudder: Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, September 26, 1989: US04870030 (51 worldwide citation)

A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. Thes ...


4
Robert J Markunas, Robert Hendry, Ronald A Rudder: Remote plasma enhanced CVD method and apparatus for growing an epitaxial semconductor layer. Reserach Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, May 28, 1991: US05018479 (44 worldwide citation)

A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. Thes ...


5
Robert J Markunas, John B Posthill, Robert C Hendry, Raymond Thomas: Plasma furnace disposal of hazardous wastes. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt P C, April 22, 2003: US06552295 (30 worldwide citation)

A method and apparatus for plasma waste disposal of hazardous waste material, where the hazardous material is volatilized under vacuum inside a containment chamber to produce a pre-processed gas as input to a plasma furnace including a plasma-forming region in which a plasma-forming magnetic field i ...


6
Ronald A Rudder, George C Hudson, Robert C Hendry, Robert J Markunas: Chemical vapor deposition of diamond films using water-based plasma discharges. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, May 23, 1995: US05418018 (10 worldwide citation)

A chemical vapor deposition (CVD) technique (process and apparatus) for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite disclosed. The selected compounds are reacted i ...


7
Daniel J Vitkavage, Gaius G Fountain, Sunil Hattangady, Ronald A Rudder, Robert J Markunas: Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, December 1, 1992: US05168330 (8 worldwide citation)

A semiconductor device including a single crystal semiconductor host material having a surface; an ultrathin pseudomorphic single crystal epitaxial interlayer formed on the surface of the host material, wherein the interlayer is formed of a material and has a thickness selected so that the material ...


8
Tatsuo Morita, Robert J Markunas, Gill Fountian, Robert Hendry, Masataka Itoh: Line plasma vapor phase deposition apparatus and method. Sharp Kabushiki Kaisha, Research Triangle Institute, Nixon & Vanderhye P C, June 1, 1999: US05908565 (6 worldwide citation)

A line plasma source (20) comprises a plasma chamber (30) configured so that plasma (32) is situated remotely and on-edge with respect to a polycrystalline silicon surface (20S) to be treated, thereby preventing damage to the surface, facilitating treatment of large substrates, and permitting low te ...


9
Ronald A Rudder, George C Hudson, Robert C Hendry, Robert J Markunas, Michael J Mantini: Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, January 2, 1996: US05480686 (4 worldwide citation)

A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedsto ...


10
Robert J Markunas, Gaius G Fountain, Robert C Hendry: Plasma processing system and method. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt P C, May 6, 2003: US06558504 (4 worldwide citation)

A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple power inductively into the chamber and ...