1
Steven T Mayer, Robert J Contolini, Anthony F Bernhardt: Method and apparatus for spatially uniform electropolishing and electrolytic etching. The United States of America represented by the United States Department of Energy, Henry P Sartorio, L E Carnahan, William R Moser, March 17, 1992: US05096550 (162 worldwide citation)

In an electropolishing or electrolytic etching apparatus the anode is separated from the cathode to prevent bubble transport to the anode and to produce a uniform current distribution at the anode by means of a solid nonconducting anode-cathode barrier. The anode extends into the top of the barrier ...


2
Jonathan D Reid, Robert J Contolini, Edward C Opocensky, Evan E Patton, Eliot K Broadbent: Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer. Novellus Systems, David E Steuber, Skjerven Morrill MacPherson Franklin & Friel, June 13, 2000: US06074544 (144 worldwide citation)

In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", ...


3
Jonathan David Reid, Robert J Contolini, John Owen Dukovic: Electroplating anode including membrane partition system and method of preventing passivation of same. Novellus Systems, International Business Machines, David E Steuber, Skjerven Morrill MacPherson Franklin & Friel, October 3, 2000: US06126798 (140 worldwide citation)

An anode includes an anode cup, a membrane and ion source material, the anode cup and membrane forming an enclosure in which the ion source material is located. The anode cup includes a base section having a central aperture and the membrane also has a central aperture. A jet is passed through the c ...


4
Wayne L Bonde, Robert J Contolini: Microchannel heat sink assembly. The United States of America represented by the United States Department of Energy, Henry P Sartorio, L E Carnahan, William R Moser, March 24, 1992: US05099311 (123 worldwide citation)

The present invention provides a microchannel heat sink with a thermal range from cryogenic temperatures to several hundred degrees centigrade. The heat sink can be used with a variety of fluids, such as cryogenic or corrosive fluids, and can be operated at a high pressure. The heat sink comprises a ...


5
Jonathan D Reid, Steven W Taatjes, Robert J Contolini, Evan E Patton: Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability. Novellus Systems, David E Steuber, Skjerven Morrill MacPherson Franklin & Friel, August 8, 2000: US06099702 (120 worldwide citation)

A plating cell has an inner plating bath container for performing electroplating on a work piece (e.g., a wafer) submerged in a solution contained by the inner plating bath container. A reclaim inlet funnels any solution overflowing the inner plating bath container back into a reservoir container to ...


6
Jonathan D Reid, Robert J Contolini, Edward C Opocensky, Evan E Patton, Eliot K Broadbent: Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer. Novellus Systems, David E Steuber, Skjerven Morrill MacPherson, December 19, 2000: US06162344 (115 worldwide citation)

In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", ...


7
Robert J Contolini, Jonathan Reid, Evan Patton, Jingbin Feng, Steve Taatjes, John Owen Dukovic: Electric potential shaping method for electroplating. Novellus Systems, International Business Machines, Skjerven Morrill MacPherson Franklin and Friel, December 12, 2000: US06159354 (109 worldwide citation)

An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thi ...


8
Jonathan D Reid, Robert J Contolini, Edward C Opocensky, Evan E Patton, Eliot K Broadbent: Method of electroplating semicoductor wafer using variable currents and mass transfer to obtain uniform plated layer. Novellus Systems, David E Steuber, Skjerven Morrill MacPherson Franklin & Friel, August 29, 2000: US06110346 (96 worldwide citation)

In electroplating a metal layer on a semiconductor wafer, the resistive voltage drop between the edge of the wafer, where the electrical terminal is located, and center of the wafer causes the plating rate to be greater at the edge than at the center. As a result of this so-called "terminal effect", ...


9
Anthony F Bernhardt, Robert J Contolini: Electrochemical planarization. The United States of America represented by the United States Department of Energy, Henry P Sartorio, Roger S Gaither, William R Moser, October 26, 1993: US05256565 (89 worldwide citation)

In a process for fabricating planarized thin film metal interconnects for integrated circuit structures, a planarized metal layer is etched back to the underlying dielectric layer by electropolishing, ion milling or other procedure. Electropolishing reduces processing time from hours to minutes and ...


10
Robert J Contolini, Jonathan Reid, Evan Patton, Jingbin Feng, Steve Taatjes, John Owen Dukovic: Electric potential shaping apparatus for holding a semiconductor wafer during electroplating. Novellus Systems, International Business Machines Corporation, David E Steuber, Skjerven Morrill MacPherson, February 27, 2001: US06193859 (55 worldwide citation)

An apparatus for depositing an electrically conductive layer on the surface of a wafer comprises a flange. The flange has a cylindrical wall and an annulus attached to a first end of the cylindrical wall. The annulus shields the edge region of the wafer surface during electroplating reducing the thi ...