1
Paul Brunemeier, Ph.D.
Paul E Brunemeier, Archita Sengupta, Justin F Gaynor, Robert H Havemann: Inhomogeneous materials having physical properties decoupled from desired functions. Novellus Systems, Silicon Valley Patent Group, March 29, 2005: US06873026 (16 worldwide citation)

A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substanti ...


2
Robert H Havemann, Shin puu Jeng: Multilevel interconnect structure with air gaps formed between metal leads. Texas Instruments Incorporated, Kay Houston, James Brady, Richard L Donaldson, October 24, 1995: US05461003 (205 worldwide citation)

A method for forming air gaps 22 between metal leads 16 of a semiconductor device and semiconductor device for same. A metal layer is deposited on a substrate 12. The metal layer is etched to form metal leads 16. A disposable solid layer 18 is deposited between the metal leads 16. A porous dielectri ...


3
Robert H Eklund, Robert H Havemann: Method for forming a transistor base region under thick oxide. Texas Instruments Incorporated, Richard A Stoltz, James T Comfort, Melvin Sharp, September 18, 1990: US04958213 (146 worldwide citation)

A process for fabricating an integrated circuit with both bipolar and CMOS transistors is disclosed. Buried n-type and p-type layers are diffused into a substrate, and a substantially intrinsic epitaxial layer is formed above the buried layers. N-wells and p-wells are formed into the epitaxial layer ...


4
James A Fair, Robert H Havemann, Jungwan Sung, Nerissa Taylor, Sang Hyeob Lee, Mary Anne Plano: Selective refractory metal and nitride capping. Novellus Systems, Beyer Weaver & Thomas, January 18, 2005: US06844258 (82 worldwide citation)

A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to for ...


5
Robert H Havemann, Shin Puu Jeng, Bruce E Gnade, Chih Chen Cho: Method of making an interconnect structure with an integrated low density dielectric. Texas Instruments Incorporated, Richard A Stoltz, Richard L Donaldson, William E Hiller, January 30, 1996: US05488015 (77 worldwide citation)

This invention provides a semiconductor device and process for making the same with dramatically reduced capacitance between adjacent conductors and an interlayer dielectric construction which emphasizes mechanical strength, etch compatibility, and good heat transfer. This process can include applyi ...


6
Robert H Havemann: Method of fabricating a self-aligned contact using organic dielectric materials. Texas Instruments Incorporated, James E Harris, Richard L Donaldson, Richard A Stoltz, January 9, 1996: US05482894 (69 worldwide citation)

A semiconductor device and process for making the same are disclosed which incorporate organic dielectric materials to form self-aligned contacts (SACTs) reliably, even in deep, narrow gaps. In one embodiment, conductors 26 with insulating conductor caps 28 are formed over a silicon substrate 20 wit ...


7
Robert H Havemann, Roger A Haken, Thomas E Tang, Che Chia Wei: Process for formation of shallow silicided junctions. Texas Instruments Incorporated, Rodney M Anderson, Leo N Heiting, Melvin Sharp, November 29, 1988: US04788160 (59 worldwide citation)

A process for forming shallow silicided junctions includes the step of sputtering a layer of titanium (28) over a moat region to cover a gate electrode (18) and a sidewall oxide (22) formed on the sidewalls of the gate electrode (18). The titanium is reacted with exposed silicon regions (24) and (26 ...


8
Robert H Havemann, Shin puu Jeng: Multilevel interconnect structure with air gaps formed between metal leads. Texas Instruments Incorporated, Kay Houston, W James Brady III, Richard L Donaldson, September 16, 1997: US05668398 (56 worldwide citation)

A semiconductor device with air gaps 22 between metal leads 16, comprising metal leads 16 formed on a substrate 12, air gaps 22 between metal leads 16, a 10-50% porous dielectric layer 20 on the metal leads 16 and over the air gaps 22, and a non-porous dielectric layer 24 on the porous dielectric la ...


9
Robert H Havemann: Method of making MOS VLSI semiconductor device with metal gate. Texas Instruments Incorporated, Richard A Stoltz, Richard L Donaldson, William E Hiller, October 12, 1993: US05252502 (56 worldwide citation)

This is a method of fabricating a transistor on a wafer. The method comprises: forming an oxide layer 40 on a doped silicon layer 32; depositing a first resist over the oxide 40 and patterning the resist with a gate oxide configuration having a predetermined gate oxide length; etching to remove port ...


10
Robert H Havemann: Self-aligned via using low permittivity dielectric. October 15, 1996: US05565384 (51 worldwide citation)

A semiconductor device and process for making the same which reduces capacitance between adjacent conductors on a connection layer, reduces overetching due to via misalignment or uneven device topography, and maintains a rigid structure with good heat transfer characterisitics. In one embodiment, ho ...



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