1
Lawrence A Booth Jr, Robert F Kwasnick: Compensating organic light emitting device displays for color variations. Intel Corporation, Trop Pruner & Hu P C, April 11, 2006: US07027015 (161 worldwide citation)

An organic light emitting device display may be compensated for color variations between sub-pixels of the same expressed color. This may be done initially upon manufacture of the display and may be continued and updated in the course of the display's lifetime to compensate for differential effects ...


2
Jack D Kingsley, Robert F Kwasnick, Ching Yeu Wei, Richard J Saia: High sensitivity, high resolution, solid state x-ray imaging device with barrier layer. General Electric Company, Donald S Ingraham, Marvin Snyder, February 16, 1993: US05187369 (73 worldwide citation)

A radiation imager includes a photodetector array having topographically patterned surface features, which include support islands disposed over the active portion of one or more photodetectors in the photodetector array. A structured scintillator array having individual columnar scintillator elemen ...


3
Scott W Petrick, Robert F Kwasnick, Rowland F Saunders, Habib Vafi, David C Neumann: Method of providing a variable guard ring width between detectors on a substrate. General Electric Company, B Joan Haushalter, Christian G Cabou, Phyllis Y Price, June 13, 2000: US06073343 (68 worldwide citation)

A method is provided for maximizing substrate usage in the fabrication of flat panel displays or detectors, while also maximizing electrostatic protection for the displays or detectors. Initially, at least two detectors are positioned on the substrate, with each of the detectors having a guard ring ...


4
Robert F Kwasnick, George E Possin, David E Holden, Richard J Saia: Method of making a thin film transistor structure with improved source/drain contacts. General Electric Company, Donald S Ingraham, Marvin Snyder, November 8, 1994: US05362660 (61 worldwide citation)

Minimum line spacing is reduced and line spacing uniformity is increased in thin film transistors by employing source/drain metallization having a first relatively thin layer of a first conductor and a second relatively thick layer of a second conductor. The second conductor is selected to be one wh ...


5
Robert F Kwasnick, Donald E Castleberry: Planar X-ray imager having a moisture-resistant sealing structure. General Electric Company, Donald S Ingraham, James C Davis Jr, Marvin Snyder, July 21, 1992: US05132539 (58 worldwide citation)

A radiation imager comprises a scintillator mated to a photodetector array. An enclosure ring is disposed around the outer sidewalls of the scintillator and an enclosure ring cover hermetically bonded to the ring extends across the scintillator to form a chamber sealably enclosing the scintillator. ...


6
Jack D Kingsley, Robert F Kwasnick: Method of forming an x-ray imaging array and the array. General Electric Company, Donald S Ingraham, James C Davis Jr, Marvin Snyder, October 6, 1992: US05153438 (53 worldwide citation)

An electronic x-ray imaging array is provided by combining a two-dimensional photosensitive array with a structured scintillator array, having a common array pattern and suitable alignment marks thereon, by bonding them face-to-face in alignment for direct coupling of x-ray luminescence from the sci ...


7
Robert F Kwasnick, George E Possin: Method of fabricating a thin film transistor using hydrogen plasma treatment of the gate dielectric/semiconductor layer interface. General Electric Company, Donald S Ingraham, Marvin Snyder, December 28, 1993: US05273920 (47 worldwide citation)

A method of fabricating a thin film transistor (TFT) includes the steps of forming a gate conductor on a substrate; depositing a gate dielectric layer of silicon nitride over the gate conductor; treating the exposed silicon nitride on the surface of the gate dielectric layer with a hydrogen plasma a ...


8
George E Possin, Robert F Kwasnick, Brian W Giambattista: Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface. General Electric Company, Donald S Ingraham, Marvin Snyder, January 25, 1994: US05281546 (38 worldwide citation)

A method of fabricating a thin film transistor (TFT) including the steps of forming a gate conductor on a substrate; depositing a gate dielectric layer over the gate conductor; depositing a layer of amorphous silicon over the gate dielectric layer; treating the exposed surface of the amorphous silic ...


9
Robert F Kwasnick, Ching Yeu Wei: Radiation imager collimator. General Electric Company, Donald S Ingraham, Marvin Snyder, July 27, 1993: US05231654 (37 worldwide citation)

A collimator for use in an imaging system with a radiation point source has a plurality of channels formed therein along longitudinal axes aligned with selected orientation angles that correspond to the direct beam path from the radiation source to the radiation detectors. The collimator comprises a ...


10
Ching Yeu Wei, Robert F Kwasnick, George E Possin: X-ray collimator. General Electric Company, Donald S Ingraham, Marvin Snyder, July 27, 1993: US05231655 (36 worldwide citation)

A collimator for use in an imaging system with a radiation point source is formed from a plurality of collimator plates stacked together. Passages in each collimator plate in conjunction with the respective passages in adjoining plates form a plurality of channels through the collimator. The channel ...